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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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  3. 2026-06 (Vol.26 No.03)
  4. 10.5573/JSTS.2026.26.3.235
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REFERENCES

1 
Y.-G. Yu, J.-H. Yun, J.-M. Lee, J.-H. Chae, 2025, A single-ended NRZ transceiver in 28-nm CMOS process with power-isolated LVSTL driver and 3-stage sampler for low-power memory interfaces, IDEC Journal of Integrated Circuits and Systems, Vol. 11, No. 4, pp. 1-8DOI
2 
I.-M. Yi, M.-K. Chae, S.-H. Hyun, S.-J. Bae, J.-H. Choi, S.-J. Jang, B. Kim, J.-Y. Sim, H.-J. Park, 2018, A time-based receiver with 2-tap decision feedback equalizer for single-ended mobile DRAM interface, IEEE Journal of Solid-State Circuits, Vol. 53, No. 1, pp. 144-154DOI
3 
T. M. Hollis, E. Stave, D. Ovard, R. Greeff, W. Spirkl, M. Brox, J. Taylor, J. Butterfield, 2019, Recent evolution in the DRAM interface: Mile markers along memory lane, IEEE Solid-State Circuits Magazine, Vol. 11, No. 2, pp. 14-30DOI
4 
C. Han, K.-S. Lee, J.-C. Lee, J.-H. Chae, 2025, A VM-terminated PAM-3 transmitter using floating middle level with enhanced signal integrity and energy efficiency for low-power memory interfaces, IEEE Transactions on Circuits and Systems I: Regular Papers, Vol. 72, No. 6, pp. 2653-2663DOI
5 
J. Choi, Y. Choi, J. Sim, Y. Kwon, S. Park, S. Kim, C. Sim, C. Kim, 2024, A single-ended NRZ receiver with gain-enhanced active-inductive CTLE and reference-selection DFE for memory interfaces, IEEE Journal of Solid-State Circuits, Vol. 59, No. 4, pp. 1261-1270DOI
6 
S. Kim, J. Sim, H. Park, Y. Choi, J. Choi, C. Kim, 2023, A 15-Gb/s single-ended NRZ receiver using self-referenced technique with 1-tap latched DFE for DRAM interfaces, IEEE Transactions on Circuits and Systems II: Express Briefs, Vol. 70, No. 1, pp. 101-105DOI