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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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  3. 2025-10 (Vol.25 No.05)
  4. 10.5573/JSTS.2025.25.5.490
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References

1 
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2 
A. M. Mahajan, L. S. Patil, J. P. Bange, and D. K. Gautam, ``Growth of SiO$_2$ films by TEOS-PECVD system for microelectronics applications,'' Surface and Coatings Technology, vol. 183, pp. 295-300, 2004.DOI
3 
J. H. Lee, C. H. Jeong, J. T. Lim, N. G. Jo, S. J. Kyung, and G. Y. Yeom, ``Characteristic of SiO$_2$ films deposited by using low-temperature PECVD with TEOS/N2/O2,'' Journal of the Korean Physical Society, vol. 46, no. 4, pp. 890-894, Apr. 2005.URL
4 
A. M. Mahajan, L. S. Patil, and D. K. Gautam, ``Influence of process parameters on the properties of TEOS–PECVD-grown SiO$_2$ films,'' Surface and Coatings Technology, vol. 188-189, pp. 314-318, , Dec. 2004.DOI
5 
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6 
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7 
A. S. Bil and S. E. Alexandrov, ``The effect of the process parameters on the growth rate and composition of the anti scratch films deposited from TEOS by AP-PECVD on polycarbonate,'' Plasma Chemistry and Plasma Processing, vol. 43, pp. 901-920, 2023DOI
8 
G. Wei, S. Varghese, K. Beaman, I. Vasilyeva, T. Mendiola, and A. Carswell, ``A comprehensive study on nanomechanical properties of various SiO$_2$-based dielectric films,'' Proc. of IEEE Workshop on Microelectronics and Electron Devices, pp. 1-4, Apr. 2010DOI
9 
J. H. Chen, T. F. Lei, J.-H. Chen, and T. S. Chao, ``Characteristics of TEOS polysilicon oxides: Improvement by CMP and high temperature RTA N$_2$/N$_2$O annealing,'' Journal of The Electrochemical Society, vol. 147, no. 11, 4282, 2000DOI
10 
C.-W. Liu, B.-T.. Dai, and C.-F. Yeh, ``Characterization of the chemical-mechanical polishing process based on nanoindentation measurement of dielectric films,'' Journal of the Electrochemical Society, vol. 142, no. 9, 3098, 1995DOI