I. INTRODUCTION
As device nodes continue to shrink and process complexity increases, the demand for
precise and reliable inspection and metrology in semiconductor manufacturing is rising
rapidly. In particular, optical metrology and inspection systems play a pivotal role
in identifying particles and micro-defects during intermediate process stages, directly
impacting yield and quality stability [1-4]. However, as optical system resolution advances, even minor hardware variations across
nominally identical tools can lead to inconsistencies in defect sensitivity. These
variations undermine process control reliability and necessitate precise tool-to-tool
matching for consistent production quality and high yield [5].
In current semiconductor fabs, matching between optical inspection systems is typically
performed manually during scheduled preventive maintenance. This process is time-consuming,
labor-intensive, and inherently limited in reproducibility and quantitative precision
due to operator dependency [6]. Moreover, existing methods often involve reusing production wafers for calibration,
making it difficult to achieve reproducible results or meaningful cross-comparisons.
Particularly in ultra-low sensitivity regions (Laser Power: 0.05-1%), it becomes extremely
challenging to distinguish fine sensitivity differences or define rigorous correction
baselines between tools [7,8].
This paper proposes a novel precision matching framework to overcome these industrial
and technical limitations. Uniquely, the structured calibration sample and matching
algorithm introduced herein were independently designed by us, rather than adapted
from prior literature or commercial systems, and were practically validated within
a high-volume semiconductor production line at Samsung Electronics. Specifically,
structured calibration wafers were fabricated using internationally certified silica
particles of four size intervals (150 nm, 250 nm, 350 nm, 450 nm) [9]. Detection discrepancies between reference and target tools were quantified through
residual matrices, and optimal hardware settings--laser power and TDI gain--were automatically
derived using a linear interpolation algorithm [10,11].
This framework, comprising calibration sample design, residual-based sensitivity analysis,
and automated parameter tuning, provides a robust, repeatable, and scalable tool matching
methodology aligned with the operational needs of smart semiconductor manufacturing
environments [12,13]. In high-volume manufacturing, patterned-wafer optical inspection at ADI/AEI/API
checkpoints provides the throughput to stop excursions early; aligning sensitivity
across the IS4100 fleet ensures consistent hold/rework decisions and prevents defect
escapes that depress final yield. In nanometer-scale high-volume manufacturing, Hitachi
High-Tech IS4100 patterned-wafer optical inspection directly affects final yield by
providing whole-wafer, in-line gating at ADI/PDI, AEI/PEI, and API control points.
At ADI, the tools detect resist scumming, micro-bridging, and pattern collapse; at
AEI they flag etch stringers and post-etch residues; at API they capture scratches,
embedded particles, and pattern-loss. These optical findings trigger automated hold/rework/release
on product lots. By matching Laser Power and TDI Gain across the IS4100 fleet, the
proposed framework ensures that the same physical excursion produces the same gating
decision across tools, preventing defect escapes and unnecessary scrap and thereby
linking optical inspection performance to the observed 0.41-pp yield improvement.
II. OPTICAL METROLOGY AND INSPECTION MATCHING OPTIMIZATION
1. Structured Calibration Wafer Architecture
On a 300-mm wafer, four circular regions (R1-R4) were defined for particle sizes of
150, 250, 350, and 450 nm. Using a Particle Deposition System (PDS), 1,000 ± 3% monodisperse
silica spheres were uniformly deposited [18] per region (≈4,000 total), with inter-region spacing to avoid optical cross-talk.
This structured artifact enables quantitative, repeatable tool-to-tool comparison
under identical scan paths, including robust evaluation in the ultra-low-sensitivity
regime (Laser Power: 0.05-1%). Fig. 1 shows the particle-size deposition map and spatial layout [14].
Fig. 1. Structured calibration wafer design and deposition map. Four zones on a 300-mm
wafer; 1,000 particles per zone (150/250/350/450 nm) uniformly spaced.
2. Selection of Matching Control Parameters: Laser Power and TDI Gain
In this study, laser power and time delay integration (TDI) gain were selected as
the key control parameters for achieving sensitivity alignment across optical inspection
systems. These two variables are independent within the optical signal chain yet significantly
influence defect detection sensitivity, making them ideal candidates for performance
matching between tools.
Laser power controls the intensity of the illumination projected onto the wafer. If
set too low, the resulting scattering signal from particles may be insufficient, leading
to missed defects. Conversely, excessive laser power can cause image saturation and
amplified noise, thereby increasing the false detection rate. TDI gain is a sensor
amplification technique that improves the signal-to-noise ratio (SNR) by temporally
integrating multiple image signals acquired during stage movement [16]. When optimally configured, it enhances sensitivity to subtle defects; however, if
set too high, it may cause image distortion or contrast loss, ultimately degrading
detection accuracy.
These two parameters exert orthogonal influence on the optical system and, when explored
jointly, provide a multidimensional space in which sensitivity characteristics can
be optimized. Accordingly, this study utilizes the two-dimensional parameter space
of laser power and TDI gain to identify the optimal configuration for each tool, enabling
precision matching across the equipment set.
3. Quantification and Visualization of Sensitivity Deviation
To quantitatively characterize the sensitivity deviation between semiconductor inspection
systems and provide a structured visual representation, we introduce a residual matrix–based
analysis framework. This approach evaluates the relative difference in particle detection
response between each system and a reference tool under identical operating conditions,
mapping the results across a two-dimensional parameter space defined by Laser Power
and Time Delay Integration (TDI) Gain.
In this paper, “detection rate” denotes the proportion of planted particle sites on
the PDS calibration wafer that are correctly reported by the tool for a given (Laser
Power, TDI Gain) setting, using one-to-one positional matching to the deposition map;
duplicate calls at a site are counted once, and off-map calls are excluded from the
metric. Terminology notes. In this paper, we use “sensitivity deviation” (instead
of “residual”) to mean the difference in detection rate between the test tool and
the reference at the same (Laser Power, TDI Gain) operating point; values are summarized
in a 5 × 5 grid and visualized as heatmaps. The experiment was conducted using 25
combinations derived from five incremental levels of Laser Power and TDI Gain. Tool–reference
differences in detection rate at each (Laser Power, TDI Gain) grid point were summarized
as a 5 × 5 sensitivity-deviation table and visualized as heatmaps for before/after
matching. Calibration workflow (non-iterative). Each tool acquires a single 5 × 5
grid over predefined levels of Laser Power and TDI Gain. Detection rate at each grid
point is computed against the PDS deposition map, producing a 5 × 5 sensitivity-deviation
table. A software fine-grid search (up-sampling of the 5 × 5 surface) identifies the
operating point that minimizes the absolute tool–reference deviation. The selected
settings are applied once, and a single verification scan confirms alignment. To facilitate
interpretation, we visualized the complete sensitivity-deviation using a heatmap,
where the color gradient encodes the magnitude of residual values. As shown in Fig. 2, the heatmap presents both the pre- and post-optimization results side by side, enabling
direct visual comparison of sensitivity alignment performance. This unified visualization
allows intuitive evaluation of improvements across the full Laser Power–TDI Gain space.
Fig. 2. Heatmap visualization of residual matrix before and after matching.
Notably, significant reductions in deviation were observed in the ultra-low sensitivity
region (Laser Power: 0.05-1%), where conventional manual calibration is often unreliable.
These results demonstrate the robustness and practical effectiveness of the proposed
matching framework in minimizing hardware-induced performance discrepancies across
tools. To obtain a denser view of the response surface, the 5 × 5 grid was up-sampled
to a finer grid by standard bilinear interpolation, and the setting with the minimum
absolute tool–reference deviation was selected. A 3D visualization of the interpolated
surface is shown in Fig. 3, Fleet-level dispersion was summarized by the root-mean-square error (RMSE) across
tools, computed on detection-rate deviations at matched operating points [20].
Fig. 3. Interpolated sensitivity-surface visualization.
We summarize across-tool dispersion using the conventional root-mean-square error
(RMSE): where $y_t$ is the observed detection rate (%) of tool $t$ at its matched
operating point (Laser Power, TDI Gain), $\hat{y}_t$ is the target detection rate
(%) given by the reference tool at the same operating point (thus constant across
$t$), and $n$ is the number of non-reference tools (here $n=190$). Detection rates
are expressed in percent, so residuals and RMSE are reported in percentage points
(pp). RMSE is non-negative (zero only under perfect alignment); for interpretation,
RMSE = 2.0 implies an average 2.0-pp difference at the matched operating point. Because
errors are squared, RMSE is more sensitive to large mismatches than to small ones
[21]. For completeness, we also computed a surface-level RMSE across the full 5 × 5 (Laser
Power, TDI Gain) grid per tool; conclusions were unchanged.
III. EXPERIMENTAL CONFIGURATION AND RESULTS ANALYSIS
To rigorously evaluate the performance and industrial applicability of the proposed
optical metrology matching optimization framework, a comprehensive validation study
was conducted in a high-volume semiconductor manufacturing setting. The experimental
campaign was carried out at Samsung Electronics’ Semiconductor Division and involved
the deployment of the proposed methodology across a fleet of 191 nominally identical
optical defect inspection tools operating on the production line. The primary objectives
of this large-scale study were threefold. First, we aimed to quantitatively verify
the sensitivity alignment accuracy enabled by our framework, using a structured calibration
wafer fabricated with a Particle Deposition System (PDS). Second, we sought to compare
the sensitivity distribution across tools both before and after the application of
automated parameter optimization, to determine the consistency and robustness of the
alignment results. Lastly, we evaluated the broader operational impact of the framework,
including improvements in preventive maintenance (PM) efficiency and its contribution
to overall production yield enhancement. This section presents the experimental design,
data collection methodology, optimization procedures, and post-matching performance
assessments, offering comprehensive insight into the practical benefits and scalability
of the proposed approach under real-world manufacturing conditions. For clarity, the
matching is not an iterative zoom-in; a single 5×5 acquisition is followed by a software
fine-grid search and one verification scan. For avoidance of doubt, detection-rate–based
sensitivity matching is a metrology metric; the production-yield results presented
here are computed independently from electrical die-sort (EDS) data. Integration of
IS4100 in the yield pathway. Within the evaluated run sheets, lots traverse IS4100
checkpoints at after-develop (ADI/PDI), after-etch (AEI/PEI), and after-CMP (API).
These in-line, high-throughput patterned-wafer inspections detect resist scumming
and bridging, post-etch residues and stringers, and scratches/embedded particles/pattern
loss and feed automatic hold/rework/release logic on product lots, clarifying where
and how optical inspection ties into production control. By matching Laser Power and
TDI Gain across the IS4100 fleet, cross-tool sensitivity drift is reduced to within
±2%, which stabilizes excursion thresholds and ensures consistent gating decisions
across tools; this mechanism links optical inspection performance to yield, consistent
with the observed 0.41-pp improvement.
1. Experimental Configuration and Implementation
To evaluate the sensitivity alignment performance of the proposed framework under
actual manufacturing conditions, a structured calibration wafer was custom-fabricated
using a 300 mm substrate. The wafer incorporated four distinct particle zones, each
populated with 1,000 monodisperse silica particles of varying diameters: 150 nm, 250
nm, 350 nm, and 450 nm. These particle sizes were chosen to represent a realistic
range of critical defect dimensions encountered in optical inspection processes. The
spatial layout of the particle zones was symmetrically arranged to minimize cross-interference,
and deposition uniformity was strictly controlled to ensure high repeatability and
metrological consistency across tools. Tooling and deployment stages. The 191 inspection
systems used in this study are Hitachi High-Tech IS4100 patterned-wafer defect inspection
tools (registered in Korea as a Patterned Wafer Inspection System; a regulatory entry
lists IS4100 (DI4200)), deployed in-line at after-develop inspection (ADI/PDI), after-etch
inspection (AEI/PEI), and after-CMP (API) checkpoints. These stations provide high-throughput
particle and pattern-defect detection on product wafers and gate hold/rework logic
in real time. Hitachi’s public documentation for its patterned-wafer platforms (e.g.,
DI-series) describes sheet-beam optical illumination with spatial filtering for high-sensitivity
detection, and its wafer-surface LS-series explicitly documents laser-based illumination,
consistent with the optical pipeline used for defect/particle capture in our fleet
[15,19]. A total of 191 optical inspection systems was subjected to evaluation. Each tool
scanned the same calibration wafer using 25 distinct parameter settings defined by
a 5×5 matrix of Laser Power and Time Delay Integration (TDI) Gain values. One system
was designated as the reference tool, and the remaining 190 systems were compared
against it. For each tool, residual matrices were constructed by calculating the deviation
in particle detection rates from the reference values at corresponding parameter points.
These matrices provided a structured and quantitative representation of hardware-induced
sensitivity variation across the toolset. To further refine the alignment precision
beyond the discrete resolution of the experimental grid, a bilinear interpolation
algorithm was applied to each residual matrix. This technique enabled the generation
of a continuous residual surface comprising 1,600 virtual parameter combinations per
tool, thereby increasing spatial resolution within the Laser Power–TDI Gain domain.
The parameter set corresponding to the minimum interpolated residual value was identified
as the optimal configuration for that tool. Once optimal parameters were determined,
each tool was rescanned under the new settings to validate the improvement. This closed-loop
process—encompassing structured calibration, grid-based sensitivity analysis with
fine-grid search, and post-adjustment verification—was fully automated and standardized
across all tools. The implementation of this workflow resulted in robust, scalable,
and repeatable sensitivity matching, demonstrating significant performance enhancement
over traditional manual calibration methods. In particular, the framework reduced
reliance on operator experience and iterative tuning, while enabling high-throughput,
data-driven optimization suitable for Smart Fab environments.
After the optimal settings are applied, each tool completes a single verification
scan on the same PDS wafer at the selected operating point. Acceptance is explicit:
the tool is deemed “Spec in” if its PDS count matches the reference within ±5%; a
≥10% difference is “Spec out” and triggers immediate readjustment or maintenance.
Intermediate gaps are re-checked by an immediate repeat verification scan to rule
out transient variation. For every run, the system archives the calibration-wafer
ID, recipe/firmware hashes, selected Laser Power and TDI Gain, the tool–reference
deviation at the chosen point, and the verification outcome. Using a dedicated structured
wafer—rather than production wafers—ensures repeatability, prevents cross-contamination
of process lots, and provides a clean audit trail for PM planning and long-term drift
monitoring. This single-pass verify-and-log step standardizes acceptance across the
fleet and makes subsequent audits straightforward.
Fig. 4. Workflow comparison: manual calibration (iterative trial-and-error) versus
proposed single-pass software-assisted matching.
Fig. 4 presents a comparative flowchart illustrating the key differences between the conventional
manual calibration procedure and the automated sensitivity matching framework proposed
in this study. In typical semiconductor manufacturing environments, optical inspection
tools are calibrated during scheduled preventive maintenance using production wafers.
This conventional approach depends heavily on manual parameter adjustments by field
engineers, with calibration quality varying according to individual technical expertise
rather than standardized methodology. Such variability often results in inconsistent
sensitivity alignment across tools and necessitates rework—particularly in low-sensitivity
regions where precise tuning is essential. Moreover, the manual calibration process
is time-consuming and inefficient, often requiring over three hours per tool due to
iterative scan–adjust–verify cycles. This prolonged procedure consumes significant
engineering resources and reduces fab throughput. In contrast, the proposed framework
is fully automated and standardized. It begins with a single scan of a PDS-based structured
wafer, followed by grid-based sensitivity analysis and a fine-grid search over 1,600
parameter combinations. The optimal Laser Power and TDI Gain settings are applied
automatically, and a verification scan (rescanning) of the same wafer confirms sensitivity
alignment—all completed within approximately one hour per tool. By reducing calibration
time and eliminating operator-induced variability, the proposed process improves metrology
accuracy and establishes a scalable, reproducible methodology suitable for Smart Fab
and high-volume manufacturing environments. Spec criterion. In the manual flow, “Spec
in” means the tool’s PDS count matches the reference within ±5% at the selected settings;
a ≥10% count gap is flagged as Spec out and triggers readjustment.
2. Improvement in Sensitivity Matching Accuracy
The deviation in detection rates among tools was significantly reduced after applying
the sensitivity matching algorithm. Initially, an average deviation of ±9.86% (standard
deviation: 4.12%) was observed, which was reduced to ±1.73% (standard deviation: 0.58%)
after optimization. A one-sided t-test confirmed that this difference was statistically
significant with $p < 0.001$. This indicates a more than fivefold improvement in matching
accuracy and a substantial contribution to consistent inspection performance across
tools.
Beyond the mean shift, dispersion tightens markedly: the across-tool standard deviation
contracts from 4.12% to 0.58% (≈86% drop; ≈98% in variance). As Fig. 5 shows, the interquartile range shrinks, outliers largely disappear, and the effect
holds across all particle sizes—strongest at low Laser Power (0.05-0.5%). In root-mean-square
error (RMSE) terms (Eq. (1)), the fleet is within ±2%, stabilizing excursion thresholds and reducing decision
variability, false alarms, and defect escapes.
Fig. 5. Box-plot comparison of detection-rate alignment across tools before and after
matching.
Fig. 5 illustrates a comparative box plot showing the distribution of sensitivity alignment
across 191 optical inspection tools, evaluated before and after the implementation
of the proposed matching framework. Prior to optimization, the detection rates exhibited
a broad distribution, characterized by a wide interquartile range and a number of
statistical outliers—indicating significant variability in defect detection performance
among tools. Following the application of the automated matching algorithm, the distribution
converged markedly toward the median, with a pronounced reduction in interquartile
range. This narrowing of the distribution reflects improved consistency and alignment
in sensitivity responses across the entire toolset. Additionally, the substantial
decrease in outlier occurrence signifies a meaningful enhancement in uniformity, even
among tools that previously showed large deviations from the reference. These results
visually and quantitatively demonstrate the effectiveness of the proposed framework
in achieving stable and repeatable tool-to-tool calibration. Unlike conventional manual
approaches—which often rely on iterative trial-and-error procedures and are prone
to operator variability—this improvement was realized through a fully automated process,
driven by residual matrix analysis and bilinear interpolation-based parameter optimization.
The enhanced alignment contributes directly to increased measurement reliability,
reduced false detection rates, and improved predictive quality control. As semiconductor
manufacturing continues to push toward higher density and complexity, such consistency
is critical to sustaining yield and ensuring robust defect detection across process
layers. The results in Figure 5 underscore the value of adopting data-driven, algorithmic calibration methods as
a core component of modern Smart Fab environments.
3. Yield Calculation Protocol and Dataset
Yield metric and aggregation. Overall production yield was computed from electrical
die-sort (EDS) results as Yield = (Npass/Ntested) × 100%, aggregated at the lot level
and summarized per product family. Manufacturing scope. The study covered 300-mm high-volume
manufacturing for 10-nm-class second-generation DRAM (1y, a.k.a. D1y), consistent
with industry nomenclature that maps “1x/1y/1z” to successive generations of 10-nm-class
DRAM; here, 1y (D1y) denotes the second generation. Inspection control points included
post-develop inspection (PDI/ADI), post-etch inspection (PEI/AEI), and CMP defect-control
checkpoints. Observation window and population. Pre- and post-deployment windows were
defined around the fleet-wide rollout of the matching framework; products and layers
were selected to ensure comparable layer mix and stable fab conditions across the
windows. Controls and exclusions. To isolate the matching effect, periods with mask
revisions, recipe retargets, or equipment retrofits were excluded, and we verified
that no concurrent changes were made to SPC guard bands; product mix and layer distribution
were held comparable between the two windows. Statistics. Paired analyses were performed
on lot-level yields per product × layer cell. The fleet-level improvement of +0.41
percentage points remained statistically significant ($p = 0.012$, paired t-test),
with a confirmatory Wilcoxon signed-rank test showing consistent directionality. Usage
frequency of matched optical tools. In production, the matched patterned-wafer optical
inspectors were executed per lot at after-develop inspection (ADI/PDI) on the critical
lithography layers analyzed, consistent with industry-standard high-frequency ADI
sampling (every lot or every few lots). Given the standard lot size of 25 wafers,
each per-lot invocation corresponds to 25 wafers scanned at that checkpoint. These
in-line inspections also operate at AEI/PEI and API (post-CMP) control points as part
of excursion gating; because the matched tools drive hold/rework decisions at these
stations, their per-lot usage establishes a direct causal pathway from improved sensitivity
alignment to the measured yield gain [17].
4. Improvement in Maintenance Efficiency
The proposed automatic matching algorithm yielded substantial improvements in efficiency
during Preventive Maintenance (PM) operations, particularly in the context of tool
calibration workflows.
After implementing automation, the average calibration time per optical inspection
tool was measured at approximately 3.8 hours, accounting for multiple scan–adjust–verify
cycles and manual tuning steps. Following implementation of the automated framework,
this time was reduced to 2.1 hours, representing a 44.7% reduction in per-tool calibration
time. This decrease was consistently observed across the 191 tools evaluated, underscoring
the robustness and repeatability of the proposed method under varied tool conditions.
Fig. 6 provides a visual comparison between the manual and automated calibration workflows,
highlighting both the procedural differences and time savings.
Fig. 6. Comparative diagram of workflow efficiency between manual and automated matching
processes.
While the manual method necessitates repeated iterative adjustments—each susceptible
to human variability and misalignment—the automated approach executes sensitivity
analysis, parameter optimization, and final validation in a single, continuous calibration
cycle. This eliminates the trial-and-error iterations inherent in manual processes
and ensures convergence to optimal settings based on quantitative residual minimization
rather than subjective assessment. The data further reveal that the automated system
not only reduces the time burden but also enhances the stability and standardization
of PM routines. As calibration can now be completed within a fixed and predictable
window (∼2.1 hours), equipment availability is improved, and production schedules
can be more reliably maintained. When extrapolated to the full set of 191 tools, the
total annual engineering resource savings are estimated to exceed 1,300 hours, assuming
quarterly PM schedules per tool. These savings can be redirected toward higher-value
engineering tasks, contributing to both human resource efficiency and process innovation.
Additionally, by minimizing operator involvement and increasing process reproducibility,
the proposed method strengthens equipment history tracking, improves the fidelity
of sensitivity alignment records, and facilitates predictive maintenance planning.
This operational advancement aligns well with the goals of Smart Fab initiatives,
where automation, data integrity, and resource optimization are critical performance
indicators.
5. Yield Improvement and Process Stability Assessment
An analysis of actual production yield before and after applying the matching system
showed an improvement from 92.43% to 92.84%, a gain of approximately 0.41 percentage
points. A paired-sample t-test confirmed statistical significance ($p = 0.012$). Notably,
process layers requiring high-resolution sensitivity (e.g., Layers 7-9) saw improvements
of up to 0.63 percentage points, attributed to more accurate defect detection and
reduced false positives. Additionally, sensitivity alignment across tools was compared
based on Laser Power settings. The results showed significant improvements, particularly
under low Laser Power conditions (0.05-0.5%), after applying the automated matching
system. This suggests that the proposed method enables reliable sensitivity alignment
even in regions where traditional calibration methods struggle. Such improvements
are especially valuable in advanced process nodes, where tight control of inspection
performance directly affects device reliability and production yield.
Fig. 7. Detection-sensitivity alignment comparison by laser-power setting (before
vs. after optimization).
Fig. 7 quantitatively compares detection sensitivity alignment across various Laser Power
conditions (0.05%, 0.1%, 0.5%, 1.0%). Tools optimized via the proposed method consistently
outperformed those using traditional calibration, particularly in low-sensitivity
regions. This demonstrates the effectiveness of the interpolation-based matching algorithm
in maintaining robust sensitivity alignment under challenging conditions. The reduced
variance and improved convergence in detection rates further validate the algorithm’s
ability to ensure consistent inspection performance across all tools.
6. Summary of Key Results
The proposed automatic matching framework addresses the sensitivity alignment challenge
in semiconductor optical inspection systems through a combination of structured calibration
wafers, residual matrix analysis, and interpolation-based optimization. Large-scale
validation across 191 tools confirmed its effectiveness across multiple quality metrics,
including alignment accuracy, maintenance efficiency, and production yield. Matching
deviations were reduced from ±10% to within ±2%, PM time was cut by 45%, and overall
yield improved by more than 0.4 percentage points. These results indicate that the
framework is more than a technical enhancement; it represents a new paradigm for quantitative
defect sensitivity control. Furthermore, all procedures are fully automated and operator-independent,
ensuring high repeatability and reproducibility. As a core technology for Smart Fab
realization, this framework offers strong industrial scalability. It is expected to
be expanded to other in-line inspection systems, such as CD-SEM, E-Beam inspection,
and overlay metrology, evolving into an integrated alignment solution that ensures
quality uniformity across diverse semiconductor tools.