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  1. (Department of Semiconductor and Display Engineering, Sungkyunkwan University, Suwon, Republic of Korea)
  2. (Samsung Institute of Technology, Samsung-ro 1, Giheung-gu, Youngin-si, Gyeonggi-do 17113, Republic of Korea)



Optical metrology, defect inspection, particle deposition system, hardware matching, semiconductor yield, residual matrix, TDI gain, laser power optimization, Smart Fab

I. INTRODUCTION

As device nodes continue to shrink and process complexity increases, the demand for precise and reliable inspection and metrology in semiconductor manufacturing is rising rapidly. In particular, optical metrology and inspection systems play a pivotal role in identifying particles and micro-defects during intermediate process stages, directly impacting yield and quality stability [1-4]. However, as optical system resolution advances, even minor hardware variations across nominally identical tools can lead to inconsistencies in defect sensitivity. These variations undermine process control reliability and necessitate precise tool-to-tool matching for consistent production quality and high yield [5].

In current semiconductor fabs, matching between optical inspection systems is typically performed manually during scheduled preventive maintenance. This process is time-consuming, labor-intensive, and inherently limited in reproducibility and quantitative precision due to operator dependency [6]. Moreover, existing methods often involve reusing production wafers for calibration, making it difficult to achieve reproducible results or meaningful cross-comparisons. Particularly in ultra-low sensitivity regions (Laser Power: 0.05-1%), it becomes extremely challenging to distinguish fine sensitivity differences or define rigorous correction baselines between tools [7,8].

This paper proposes a novel precision matching framework to overcome these industrial and technical limitations. Uniquely, the structured calibration sample and matching algorithm introduced herein were independently designed by us, rather than adapted from prior literature or commercial systems, and were practically validated within a high-volume semiconductor production line at Samsung Electronics. Specifically, structured calibration wafers were fabricated using internationally certified silica particles of four size intervals (150 nm, 250 nm, 350 nm, 450 nm) [9]. Detection discrepancies between reference and target tools were quantified through residual matrices, and optimal hardware settings--laser power and TDI gain--were automatically derived using a linear interpolation algorithm [10,11].

This framework, comprising calibration sample design, residual-based sensitivity analysis, and automated parameter tuning, provides a robust, repeatable, and scalable tool matching methodology aligned with the operational needs of smart semiconductor manufacturing environments [12,13]. In high-volume manufacturing, patterned-wafer optical inspection at ADI/AEI/API checkpoints provides the throughput to stop excursions early; aligning sensitivity across the IS4100 fleet ensures consistent hold/rework decisions and prevents defect escapes that depress final yield. In nanometer-scale high-volume manufacturing, Hitachi High-Tech IS4100 patterned-wafer optical inspection directly affects final yield by providing whole-wafer, in-line gating at ADI/PDI, AEI/PEI, and API control points. At ADI, the tools detect resist scumming, micro-bridging, and pattern collapse; at AEI they flag etch stringers and post-etch residues; at API they capture scratches, embedded particles, and pattern-loss. These optical findings trigger automated hold/rework/release on product lots. By matching Laser Power and TDI Gain across the IS4100 fleet, the proposed framework ensures that the same physical excursion produces the same gating decision across tools, preventing defect escapes and unnecessary scrap and thereby linking optical inspection performance to the observed 0.41-pp yield improvement.

II. OPTICAL METROLOGY AND INSPECTION MATCHING OPTIMIZATION

1. Structured Calibration Wafer Architecture

On a 300-mm wafer, four circular regions (R1-R4) were defined for particle sizes of 150, 250, 350, and 450 nm. Using a Particle Deposition System (PDS), 1,000 ± 3% monodisperse silica spheres were uniformly deposited [18] per region (≈4,000 total), with inter-region spacing to avoid optical cross-talk. This structured artifact enables quantitative, repeatable tool-to-tool comparison under identical scan paths, including robust evaluation in the ultra-low-sensitivity regime (Laser Power: 0.05-1%). Fig. 1 shows the particle-size deposition map and spatial layout [14].

Fig. 1. Structured calibration wafer design and deposition map. Four zones on a 300-mm wafer; 1,000 particles per zone (150/250/350/450 nm) uniformly spaced.

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2. Selection of Matching Control Parameters: Laser Power and TDI Gain

In this study, laser power and time delay integration (TDI) gain were selected as the key control parameters for achieving sensitivity alignment across optical inspection systems. These two variables are independent within the optical signal chain yet significantly influence defect detection sensitivity, making them ideal candidates for performance matching between tools.

Laser power controls the intensity of the illumination projected onto the wafer. If set too low, the resulting scattering signal from particles may be insufficient, leading to missed defects. Conversely, excessive laser power can cause image saturation and amplified noise, thereby increasing the false detection rate. TDI gain is a sensor amplification technique that improves the signal-to-noise ratio (SNR) by temporally integrating multiple image signals acquired during stage movement [16]. When optimally configured, it enhances sensitivity to subtle defects; however, if set too high, it may cause image distortion or contrast loss, ultimately degrading detection accuracy.

These two parameters exert orthogonal influence on the optical system and, when explored jointly, provide a multidimensional space in which sensitivity characteristics can be optimized. Accordingly, this study utilizes the two-dimensional parameter space of laser power and TDI gain to identify the optimal configuration for each tool, enabling precision matching across the equipment set.

3. Quantification and Visualization of Sensitivity Deviation

To quantitatively characterize the sensitivity deviation between semiconductor inspection systems and provide a structured visual representation, we introduce a residual matrix–based analysis framework. This approach evaluates the relative difference in particle detection response between each system and a reference tool under identical operating conditions, mapping the results across a two-dimensional parameter space defined by Laser Power and Time Delay Integration (TDI) Gain.

In this paper, “detection rate” denotes the proportion of planted particle sites on the PDS calibration wafer that are correctly reported by the tool for a given (Laser Power, TDI Gain) setting, using one-to-one positional matching to the deposition map; duplicate calls at a site are counted once, and off-map calls are excluded from the metric. Terminology notes. In this paper, we use “sensitivity deviation” (instead of “residual”) to mean the difference in detection rate between the test tool and the reference at the same (Laser Power, TDI Gain) operating point; values are summarized in a 5 × 5 grid and visualized as heatmaps. The experiment was conducted using 25 combinations derived from five incremental levels of Laser Power and TDI Gain. Tool–reference differences in detection rate at each (Laser Power, TDI Gain) grid point were summarized as a 5 × 5 sensitivity-deviation table and visualized as heatmaps for before/after matching. Calibration workflow (non-iterative). Each tool acquires a single 5 × 5 grid over predefined levels of Laser Power and TDI Gain. Detection rate at each grid point is computed against the PDS deposition map, producing a 5 × 5 sensitivity-deviation table. A software fine-grid search (up-sampling of the 5 × 5 surface) identifies the operating point that minimizes the absolute tool–reference deviation. The selected settings are applied once, and a single verification scan confirms alignment. To facilitate interpretation, we visualized the complete sensitivity-deviation using a heatmap, where the color gradient encodes the magnitude of residual values. As shown in Fig. 2, the heatmap presents both the pre- and post-optimization results side by side, enabling direct visual comparison of sensitivity alignment performance. This unified visualization allows intuitive evaluation of improvements across the full Laser Power–TDI Gain space.

Fig. 2. Heatmap visualization of residual matrix before and after matching.

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Notably, significant reductions in deviation were observed in the ultra-low sensitivity region (Laser Power: 0.05-1%), where conventional manual calibration is often unreliable. These results demonstrate the robustness and practical effectiveness of the proposed matching framework in minimizing hardware-induced performance discrepancies across tools. To obtain a denser view of the response surface, the 5 × 5 grid was up-sampled to a finer grid by standard bilinear interpolation, and the setting with the minimum absolute tool–reference deviation was selected. A 3D visualization of the interpolated surface is shown in Fig. 3, Fleet-level dispersion was summarized by the root-mean-square error (RMSE) across tools, computed on detection-rate deviations at matched operating points [20].

Fig. 3. Interpolated sensitivity-surface visualization.

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(1)
$\text{RMSE} = \sqrt{\frac{1}{n}\sum_{t=1}^{n}\bigl(y_t - \hat{y}_t\bigr)^2}, $

Fleet-level dispersion metric.

We summarize across-tool dispersion using the conventional root-mean-square error (RMSE): where $y_t$ is the observed detection rate (%) of tool $t$ at its matched operating point (Laser Power, TDI Gain), $\hat{y}_t$ is the target detection rate (%) given by the reference tool at the same operating point (thus constant across $t$), and $n$ is the number of non-reference tools (here $n=190$). Detection rates are expressed in percent, so residuals and RMSE are reported in percentage points (pp). RMSE is non-negative (zero only under perfect alignment); for interpretation, RMSE = 2.0 implies an average 2.0-pp difference at the matched operating point. Because errors are squared, RMSE is more sensitive to large mismatches than to small ones [21]. For completeness, we also computed a surface-level RMSE across the full 5 × 5 (Laser Power, TDI Gain) grid per tool; conclusions were unchanged.

III. EXPERIMENTAL CONFIGURATION AND RESULTS ANALYSIS

To rigorously evaluate the performance and industrial applicability of the proposed optical metrology matching optimization framework, a comprehensive validation study was conducted in a high-volume semiconductor manufacturing setting. The experimental campaign was carried out at Samsung Electronics’ Semiconductor Division and involved the deployment of the proposed methodology across a fleet of 191 nominally identical optical defect inspection tools operating on the production line. The primary objectives of this large-scale study were threefold. First, we aimed to quantitatively verify the sensitivity alignment accuracy enabled by our framework, using a structured calibration wafer fabricated with a Particle Deposition System (PDS). Second, we sought to compare the sensitivity distribution across tools both before and after the application of automated parameter optimization, to determine the consistency and robustness of the alignment results. Lastly, we evaluated the broader operational impact of the framework, including improvements in preventive maintenance (PM) efficiency and its contribution to overall production yield enhancement. This section presents the experimental design, data collection methodology, optimization procedures, and post-matching performance assessments, offering comprehensive insight into the practical benefits and scalability of the proposed approach under real-world manufacturing conditions. For clarity, the matching is not an iterative zoom-in; a single 5×5 acquisition is followed by a software fine-grid search and one verification scan. For avoidance of doubt, detection-rate–based sensitivity matching is a metrology metric; the production-yield results presented here are computed independently from electrical die-sort (EDS) data. Integration of IS4100 in the yield pathway. Within the evaluated run sheets, lots traverse IS4100 checkpoints at after-develop (ADI/PDI), after-etch (AEI/PEI), and after-CMP (API). These in-line, high-throughput patterned-wafer inspections detect resist scumming and bridging, post-etch residues and stringers, and scratches/embedded particles/pattern loss and feed automatic hold/rework/release logic on product lots, clarifying where and how optical inspection ties into production control. By matching Laser Power and TDI Gain across the IS4100 fleet, cross-tool sensitivity drift is reduced to within ±2%, which stabilizes excursion thresholds and ensures consistent gating decisions across tools; this mechanism links optical inspection performance to yield, consistent with the observed 0.41-pp improvement.

1. Experimental Configuration and Implementation

To evaluate the sensitivity alignment performance of the proposed framework under actual manufacturing conditions, a structured calibration wafer was custom-fabricated using a 300 mm substrate. The wafer incorporated four distinct particle zones, each populated with 1,000 monodisperse silica particles of varying diameters: 150 nm, 250 nm, 350 nm, and 450 nm. These particle sizes were chosen to represent a realistic range of critical defect dimensions encountered in optical inspection processes. The spatial layout of the particle zones was symmetrically arranged to minimize cross-interference, and deposition uniformity was strictly controlled to ensure high repeatability and metrological consistency across tools. Tooling and deployment stages. The 191 inspection systems used in this study are Hitachi High-Tech IS4100 patterned-wafer defect inspection tools (registered in Korea as a Patterned Wafer Inspection System; a regulatory entry lists IS4100 (DI4200)), deployed in-line at after-develop inspection (ADI/PDI), after-etch inspection (AEI/PEI), and after-CMP (API) checkpoints. These stations provide high-throughput particle and pattern-defect detection on product wafers and gate hold/rework logic in real time. Hitachi’s public documentation for its patterned-wafer platforms (e.g., DI-series) describes sheet-beam optical illumination with spatial filtering for high-sensitivity detection, and its wafer-surface LS-series explicitly documents laser-based illumination, consistent with the optical pipeline used for defect/particle capture in our fleet [15,19]. A total of 191 optical inspection systems was subjected to evaluation. Each tool scanned the same calibration wafer using 25 distinct parameter settings defined by a 5×5 matrix of Laser Power and Time Delay Integration (TDI) Gain values. One system was designated as the reference tool, and the remaining 190 systems were compared against it. For each tool, residual matrices were constructed by calculating the deviation in particle detection rates from the reference values at corresponding parameter points. These matrices provided a structured and quantitative representation of hardware-induced sensitivity variation across the toolset. To further refine the alignment precision beyond the discrete resolution of the experimental grid, a bilinear interpolation algorithm was applied to each residual matrix. This technique enabled the generation of a continuous residual surface comprising 1,600 virtual parameter combinations per tool, thereby increasing spatial resolution within the Laser Power–TDI Gain domain. The parameter set corresponding to the minimum interpolated residual value was identified as the optimal configuration for that tool. Once optimal parameters were determined, each tool was rescanned under the new settings to validate the improvement. This closed-loop process—encompassing structured calibration, grid-based sensitivity analysis with fine-grid search, and post-adjustment verification—was fully automated and standardized across all tools. The implementation of this workflow resulted in robust, scalable, and repeatable sensitivity matching, demonstrating significant performance enhancement over traditional manual calibration methods. In particular, the framework reduced reliance on operator experience and iterative tuning, while enabling high-throughput, data-driven optimization suitable for Smart Fab environments.

After the optimal settings are applied, each tool completes a single verification scan on the same PDS wafer at the selected operating point. Acceptance is explicit: the tool is deemed “Spec in” if its PDS count matches the reference within ±5%; a ≥10% difference is “Spec out” and triggers immediate readjustment or maintenance. Intermediate gaps are re-checked by an immediate repeat verification scan to rule out transient variation. For every run, the system archives the calibration-wafer ID, recipe/firmware hashes, selected Laser Power and TDI Gain, the tool–reference deviation at the chosen point, and the verification outcome. Using a dedicated structured wafer—rather than production wafers—ensures repeatability, prevents cross-contamination of process lots, and provides a clean audit trail for PM planning and long-term drift monitoring. This single-pass verify-and-log step standardizes acceptance across the fleet and makes subsequent audits straightforward.

Fig. 4. Workflow comparison: manual calibration (iterative trial-and-error) versus proposed single-pass software-assisted matching.

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Fig. 4 presents a comparative flowchart illustrating the key differences between the conventional manual calibration procedure and the automated sensitivity matching framework proposed in this study. In typical semiconductor manufacturing environments, optical inspection tools are calibrated during scheduled preventive maintenance using production wafers. This conventional approach depends heavily on manual parameter adjustments by field engineers, with calibration quality varying according to individual technical expertise rather than standardized methodology. Such variability often results in inconsistent sensitivity alignment across tools and necessitates rework—particularly in low-sensitivity regions where precise tuning is essential. Moreover, the manual calibration process is time-consuming and inefficient, often requiring over three hours per tool due to iterative scan–adjust–verify cycles. This prolonged procedure consumes significant engineering resources and reduces fab throughput. In contrast, the proposed framework is fully automated and standardized. It begins with a single scan of a PDS-based structured wafer, followed by grid-based sensitivity analysis and a fine-grid search over 1,600 parameter combinations. The optimal Laser Power and TDI Gain settings are applied automatically, and a verification scan (rescanning) of the same wafer confirms sensitivity alignment—all completed within approximately one hour per tool. By reducing calibration time and eliminating operator-induced variability, the proposed process improves metrology accuracy and establishes a scalable, reproducible methodology suitable for Smart Fab and high-volume manufacturing environments. Spec criterion. In the manual flow, “Spec in” means the tool’s PDS count matches the reference within ±5% at the selected settings; a ≥10% count gap is flagged as Spec out and triggers readjustment.

2. Improvement in Sensitivity Matching Accuracy

The deviation in detection rates among tools was significantly reduced after applying the sensitivity matching algorithm. Initially, an average deviation of ±9.86% (standard deviation: 4.12%) was observed, which was reduced to ±1.73% (standard deviation: 0.58%) after optimization. A one-sided t-test confirmed that this difference was statistically significant with $p < 0.001$. This indicates a more than fivefold improvement in matching accuracy and a substantial contribution to consistent inspection performance across tools.

Beyond the mean shift, dispersion tightens markedly: the across-tool standard deviation contracts from 4.12% to 0.58% (≈86% drop; ≈98% in variance). As Fig. 5 shows, the interquartile range shrinks, outliers largely disappear, and the effect holds across all particle sizes—strongest at low Laser Power (0.05-0.5%). In root-mean-square error (RMSE) terms (Eq. (1)), the fleet is within ±2%, stabilizing excursion thresholds and reducing decision variability, false alarms, and defect escapes.

Fig. 5. Box-plot comparison of detection-rate alignment across tools before and after matching.

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Fig. 5 illustrates a comparative box plot showing the distribution of sensitivity alignment across 191 optical inspection tools, evaluated before and after the implementation of the proposed matching framework. Prior to optimization, the detection rates exhibited a broad distribution, characterized by a wide interquartile range and a number of statistical outliers—indicating significant variability in defect detection performance among tools. Following the application of the automated matching algorithm, the distribution converged markedly toward the median, with a pronounced reduction in interquartile range. This narrowing of the distribution reflects improved consistency and alignment in sensitivity responses across the entire toolset. Additionally, the substantial decrease in outlier occurrence signifies a meaningful enhancement in uniformity, even among tools that previously showed large deviations from the reference. These results visually and quantitatively demonstrate the effectiveness of the proposed framework in achieving stable and repeatable tool-to-tool calibration. Unlike conventional manual approaches—which often rely on iterative trial-and-error procedures and are prone to operator variability—this improvement was realized through a fully automated process, driven by residual matrix analysis and bilinear interpolation-based parameter optimization. The enhanced alignment contributes directly to increased measurement reliability, reduced false detection rates, and improved predictive quality control. As semiconductor manufacturing continues to push toward higher density and complexity, such consistency is critical to sustaining yield and ensuring robust defect detection across process layers. The results in Figure 5 underscore the value of adopting data-driven, algorithmic calibration methods as a core component of modern Smart Fab environments.

3. Yield Calculation Protocol and Dataset

Yield metric and aggregation. Overall production yield was computed from electrical die-sort (EDS) results as Yield = (Npass/Ntested) × 100%, aggregated at the lot level and summarized per product family. Manufacturing scope. The study covered 300-mm high-volume manufacturing for 10-nm-class second-generation DRAM (1y, a.k.a. D1y), consistent with industry nomenclature that maps “1x/1y/1z” to successive generations of 10-nm-class DRAM; here, 1y (D1y) denotes the second generation. Inspection control points included post-develop inspection (PDI/ADI), post-etch inspection (PEI/AEI), and CMP defect-control checkpoints. Observation window and population. Pre- and post-deployment windows were defined around the fleet-wide rollout of the matching framework; products and layers were selected to ensure comparable layer mix and stable fab conditions across the windows. Controls and exclusions. To isolate the matching effect, periods with mask revisions, recipe retargets, or equipment retrofits were excluded, and we verified that no concurrent changes were made to SPC guard bands; product mix and layer distribution were held comparable between the two windows. Statistics. Paired analyses were performed on lot-level yields per product × layer cell. The fleet-level improvement of +0.41 percentage points remained statistically significant ($p = 0.012$, paired t-test), with a confirmatory Wilcoxon signed-rank test showing consistent directionality. Usage frequency of matched optical tools. In production, the matched patterned-wafer optical inspectors were executed per lot at after-develop inspection (ADI/PDI) on the critical lithography layers analyzed, consistent with industry-standard high-frequency ADI sampling (every lot or every few lots). Given the standard lot size of 25 wafers, each per-lot invocation corresponds to 25 wafers scanned at that checkpoint. These in-line inspections also operate at AEI/PEI and API (post-CMP) control points as part of excursion gating; because the matched tools drive hold/rework decisions at these stations, their per-lot usage establishes a direct causal pathway from improved sensitivity alignment to the measured yield gain [17].

4. Improvement in Maintenance Efficiency

The proposed automatic matching algorithm yielded substantial improvements in efficiency during Preventive Maintenance (PM) operations, particularly in the context of tool calibration workflows.

After implementing automation, the average calibration time per optical inspection tool was measured at approximately 3.8 hours, accounting for multiple scan–adjust–verify cycles and manual tuning steps. Following implementation of the automated framework, this time was reduced to 2.1 hours, representing a 44.7% reduction in per-tool calibration time. This decrease was consistently observed across the 191 tools evaluated, underscoring the robustness and repeatability of the proposed method under varied tool conditions. Fig. 6 provides a visual comparison between the manual and automated calibration workflows, highlighting both the procedural differences and time savings.

Fig. 6. Comparative diagram of workflow efficiency between manual and automated matching processes.

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While the manual method necessitates repeated iterative adjustments—each susceptible to human variability and misalignment—the automated approach executes sensitivity analysis, parameter optimization, and final validation in a single, continuous calibration cycle. This eliminates the trial-and-error iterations inherent in manual processes and ensures convergence to optimal settings based on quantitative residual minimization rather than subjective assessment. The data further reveal that the automated system not only reduces the time burden but also enhances the stability and standardization of PM routines. As calibration can now be completed within a fixed and predictable window (∼2.1 hours), equipment availability is improved, and production schedules can be more reliably maintained. When extrapolated to the full set of 191 tools, the total annual engineering resource savings are estimated to exceed 1,300 hours, assuming quarterly PM schedules per tool. These savings can be redirected toward higher-value engineering tasks, contributing to both human resource efficiency and process innovation. Additionally, by minimizing operator involvement and increasing process reproducibility, the proposed method strengthens equipment history tracking, improves the fidelity of sensitivity alignment records, and facilitates predictive maintenance planning. This operational advancement aligns well with the goals of Smart Fab initiatives, where automation, data integrity, and resource optimization are critical performance indicators.

5. Yield Improvement and Process Stability Assessment

An analysis of actual production yield before and after applying the matching system showed an improvement from 92.43% to 92.84%, a gain of approximately 0.41 percentage points. A paired-sample t-test confirmed statistical significance ($p = 0.012$). Notably, process layers requiring high-resolution sensitivity (e.g., Layers 7-9) saw improvements of up to 0.63 percentage points, attributed to more accurate defect detection and reduced false positives. Additionally, sensitivity alignment across tools was compared based on Laser Power settings. The results showed significant improvements, particularly under low Laser Power conditions (0.05-0.5%), after applying the automated matching system. This suggests that the proposed method enables reliable sensitivity alignment even in regions where traditional calibration methods struggle. Such improvements are especially valuable in advanced process nodes, where tight control of inspection performance directly affects device reliability and production yield.

Fig. 7. Detection-sensitivity alignment comparison by laser-power setting (before vs. after optimization).

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Fig. 7 quantitatively compares detection sensitivity alignment across various Laser Power conditions (0.05%, 0.1%, 0.5%, 1.0%). Tools optimized via the proposed method consistently outperformed those using traditional calibration, particularly in low-sensitivity regions. This demonstrates the effectiveness of the interpolation-based matching algorithm in maintaining robust sensitivity alignment under challenging conditions. The reduced variance and improved convergence in detection rates further validate the algorithm’s ability to ensure consistent inspection performance across all tools.

6. Summary of Key Results

The proposed automatic matching framework addresses the sensitivity alignment challenge in semiconductor optical inspection systems through a combination of structured calibration wafers, residual matrix analysis, and interpolation-based optimization. Large-scale validation across 191 tools confirmed its effectiveness across multiple quality metrics, including alignment accuracy, maintenance efficiency, and production yield. Matching deviations were reduced from ±10% to within ±2%, PM time was cut by 45%, and overall yield improved by more than 0.4 percentage points. These results indicate that the framework is more than a technical enhancement; it represents a new paradigm for quantitative defect sensitivity control. Furthermore, all procedures are fully automated and operator-independent, ensuring high repeatability and reproducibility. As a core technology for Smart Fab realization, this framework offers strong industrial scalability. It is expected to be expanded to other in-line inspection systems, such as CD-SEM, E-Beam inspection, and overlay metrology, evolving into an integrated alignment solution that ensures quality uniformity across diverse semiconductor tools.

IV. CONCLUSIONS

This work presents a precision matching framework that combines a structured calibration wafer, residual-based sensitivity quantification, and interpolation-driven parameter optimization to address performance alignment challenges in semiconductor inspection systems. The proposed methodology was implemented on 191 optical inspection tools in a high-volume manufacturing (HVM) line at Samsung Electronics. As a result, sensitivity matching deviation was reduced from ±10% to within ±2%, preventive maintenance time was shortened by 45%, and production yield increased by approximately 0.41 percentage points. These results highlight the technical advantages of the proposed approach over conventional manual calibration methods, particularly in terms of accuracy, repeatability, and automation. Unlike traditional iterative procedures, the framework quantifies sensitivity discrepancies through residual matrix analysis and identifies optimal parameter settings via high-resolution bilinear interpolation. This enables consistent and precise quality control across tools, satisfying the rigorous requirements of modern Smart Fab environments. Ultimately, the proposed system establishes a fully automated and operator-independent metrology infrastructure that is robust, scalable, and suitable for next-generation semiconductor fabs aiming to enhance calibration efficiency, ensure production stability, and improve long-term process reproducibility.

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Hyoseop Shin
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Hyoseop Shin is the first author of this paper and is currently pursuing a Ph.D. degree in the Department of Semiconductor and Display Engineering at Sungkyunkwan University, Samsung Institute of Technology, Republic of Korea. He is also an engineer with the Semiconductor Business Division at Samsung Electronics, South Korea. His research interests include optical metrology optimization, defect inspection alignment, and smart factory automation for high-volume semiconductor manufacturing.

Hojun Lee
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Hojun Lee is currently pursuing a M.S. degree in Industrial Engineering at Kongju National University, Gongju, South Korea. His research focuses on Smart Fab systems and the integration of advanced supply chain strategies for the semiconductor industry. He is particularly interested in applying data-driven and statistical methodologies to optimize high-volume semiconductor manufacturing and support real-time decision-making in intelligent fabrication environments.

Dongkun Shin
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Dongkun Shin received his Ph.D. degree in computer science and engineering from Seoul National University, Seoul, South Korea, in 2004. From 2004 to 2007, he was a Senior Engineer with Samsung Electronics, South Korea. He is currently a Professor with the Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, South Korea. His research interests include flash storage, machine learning, computer architecture, and operating systems.