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  1. (Department of Electronic Engineering, Sogang University, Seoul 04107, Korea)
  2. (Division of Semiconductor and Electronics Engineering, Hankuk University of Foreign Studies, Yongin-si, Gyeonggi-do 17035, Korea)



Analog-to-digital converter (ADC), noise-shaping successive approximation register (NS-SAR), noise, transfer function (NTF), lossless integration, a ping-pong switched-capacitor (SC)

I. INTRODUCTION

The growth of wireless communication systems has increased interest in the development of analog-to-digital converters (ADCs) that operate with MHz-range bandwidth while maintaining high power efficiency. Among various ADC architectures, successive approximation register (SAR) analog-to-digital converters (ADCs) have been widely used, owing to their low-power consumption, compact area. However, as the required signal-to-noise and distortion ratio (SNDR) increases, SAR ADC architectures face scalability challenges: the exponential increase in unit capacitors per bit leads to a larger area, while the increased comparator noise requirement results in higher power consumption [1].

The noise-shaping (NS) SAR ADC [2] employs a loop filter that pushes quantization noise out of band, thereby reducing the number of unit capacitors needed to achieve the desired resolution. Additionally, oversampling enables the use of dynamic element matching (DEM) [3], which relaxes the capacitor matching constraints and allows for smaller unit capacitors. As a result, the size overhead of the capacitive DAC can be alleviated. Simultaneously, comparator noise is also shaped by the loop filter, thereby relaxing its design constraints [4].

[5,6] have employed fully passive integrator as loop filters to maintain the low-power characteristics of the SAR ADC architectures. However, signal attenuation caused by charge sharing results in a flat noise transfer function (NTF) response, reducing the effectiveness of noise suppression. In [7], to compensate the residue voltage attenuation, open-loop amplifier is employed in the integrator. However, since the integration still relies on passive charge sharing, the signal attenuation is not fully compensated. [8] realizes an ideal second-order NTF by employing the open-loop amplifiers used in [9], along with a ping-pong switched-capacitor (SC) structure, where two amplifiers are assigned to the first and second integrators, respectively.

This paper presents an NS-SAR ADC that achieves an ideal second-order NTF by employing integrators that combine an amplifier with a ping-pong SC structure used in [8]. Moreover, the amplifier is shared between the two integrators, which reduces the area of the loop filter.

This paper is organized as follows. Section II describes prior integrators used in NS-SAR ADC. Section III outlines the architecture of the proposed second-order integrator. Section IV describes the circuit implementation. Section V presents the measurement results, and Section VI concludes the paper.

II. NS-SAR ADC WITH LOSSY INTEGRATORS

Fig. 1(a) illustrates prior integration models of fully passive loop filter, in [6]. To describe the transfer model, the capacitances of the capacitive digital-to-analog converter C${}_{\rm DAC}$, residue capacitor C${}_{\rm RES}$, and integration capacitor C${}_{\rm INT}$ are set to be equal. During the residue sampling phase $\Phi_{\rm RS}$, the residue voltage V${}_{\rm RES}$ is sampled onto the C${}_{\rm DAC}$, while C${}_{\rm RES}$ is reset. During $\Phi_{1}$, charge sharing leads to sampling loss, resulting in only half of V${}_{\rm RES}$ being sampled onto C${}_{\rm RES}$. Then, in the $\Phi_{2}$, the charge in C${}_{\rm RES}$ is shared with the C${}_{\rm INT}$, forming the integrated voltage V${}_{\rm INT}$ while inherently introducing signal and integration losses. Although the attenuated V${}_{\rm INT}$ is compensated by applying a relative gain at the comparator input, the transfer function remains uncompensated due to losses accumulated over previous cycles, as described in the equation in Fig. 1(a).

As shown in Fig. 1(b), to sample V${}_{\rm RES}$ onto C${}_{\rm RES}$ without attenuation, [7] employs an amplifier with a gain of two instead of using passive charge sharing from the C${}_{\rm DAC}$${}_{\ }$in $\Phi_{1}$. During $\Phi_{2}$, although charge sharing occurs between C${}_{\rm RES}$ and C${}_{\rm INT}$, the V${}_{\rm RES}$ of the present cycle is not attenuated, whereas the values from previous cycles gradually decrease. As shown in the equation of Fig. 1(b), the previous V${}_{\rm RES}$ values are attenuated by a factor of two in each following cycle.

Fig. 1. Prior integration models of (a) fully passive and (b) amplifier-assisted.

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III. PROPOSED SECOND-ORDER INTEGRATOR

1. Shared Amplifier for Lossless SC Integration

Fig. 2 shows the second-order integrator with ping-pong SC structures used in [8] and in the proposed work, along with the same timing diagram used in both. As shown in Fig. 2(a), the first integrator in [8] consists of C${}_{\rm INT1A}$, C${}_{\rm INT1B}$, and Amp1, an amplifier with a gain of two. The second integrator is composed of C${}_{\rm INT2A}$, C${}_{\rm INT2B}$, and Amp2, which provides a gain of three. In this structure, two individual amplifiers are used to generate V${}_{\rm INT1}$ and V${}_{\rm INT2}$ through separate integration paths, followed by signal summation via a multi-path comparator [2]. The proposed ADC shown in Fig. 2(b) employs a shared amplifier to realize the second-order integrator. The fully-differential flipped voltage follower (FD-FVF), introduced in [10], eliminates the need for reset operations between consecutive amplification phases. This enables amplifier sharing between two integrators, resulting in area reduction.

The timing diagrams for both [8] and the proposed architecture are shown in Fig. 2(c). After the residue voltage sampling phase $\Phi_{R}$${}_{\rm S}$, a charge sharing occurs between the C${}_{\rm DAC}$ and C${}_{\rm INT1A}$ during $\Phi_{1}$. In $\Phi_{2}$, compensation and charge sharing are simultaneously carried out by the first and second integrators, respectively. Then, during $\Phi_{3}$, the second integrator performs compensation. Although the integrators in [8] and the proposed ADC operate with the same timing diagram, they differ in amplifier configuration. In [8], separate amplifiers (Amp1 and Amp2) are used for integration: Amp1 operates in $\Phi_{2}$, while Amp2 operates in $\Phi_{3}$. In contrast, the proposed design uses a single amplifier (Amp3) for integration, which is shared between $\Phi_{2}$ and $\Phi_{3}$.

Fig. 2. Schematic of the second-order integrator with (a) from [8], (b) the proposed design, and (c) the timing diagram.

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2. Realization of an Ideal Second-Order NS

Fig. 3 illustrates the circuit-level operation of the lossless integrator. The C${}_{\rm DAC}$ and integration capacitors C${}_{\rm INT1A/B}$ and C${}_{\rm INT2A/B}$ are designed to have equal capacitance to achieve an ideal second-order NTF. The integration process begins after SAR conversions are completed. The residue voltage of $N${th} cycle V${}_{\rm RES}$(N) remains on the C${}_{\rm DAC}$, while capacitors C${}_{\rm INT1A}$ and C${}_{\rm INT2A}$ hold the integration voltages of the $(N-1)${th} cycle, V${}_{\rm INT1} (N-1)$ and V${}_{\rm INT2} (N-1)$, respectively.

Fig. 3. Circuit-level operation of the lossless integrator.

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During $\Phi_{1}$, in the first integrator, the charge on the C${}_{\rm DAC}$ is shared with capacitor C${}_{\rm INT1A}$, generating the first intermediate voltage V${}_{\rm INT1^{'}} (N)$, expressed following as Eqs. (1) and (2):

(1)
${\mathrm{C}}_{\mathrm{DAC}}\cdot{\mathrm{V}}_{\mathrm{RES}}\left({N}\right)+{\mathrm{C}}_{\mathrm{INT1A}}\cdot{\mathrm{V}}_{\mathrm{INT1}}\left({N-1}\right)\nonumber \\ =\left({\mathrm{C}}_{\mathrm{DAC}}+{\mathrm{C}}_{\mathrm{INT1A}}\right)\cdot{{\mathrm{V}}^{\mathrm{'}}}_{\mathrm{INT1}}\left({N}\right), $
(2)
$ {{\mathrm{V}}^{\mathrm{'}}}_{\mathrm{INT1}}\left({N}\right)=\frac{{\mathrm{V}}_{\mathrm{RES}}\left({N}\right)+{\mathrm{V}}_{\mathrm{INT1}}{(N-1)}}{{2}} . $

In $\Phi_{2}$, V${}_{\rm INT1^{'}} (N)$ is amplified by a factor of two through the amplifier then sampled on capacitor C${}_{\rm INT1B}$. As a result, V${}_{\rm INT1} (N)$ accumulates both V${}_{\rm RES} (N)$ and V${}_{\rm INT1} (N-1)$, without any loss as

(3)
${\mathrm{V}}_{\mathrm{INT1}}\left({N}\right)=2{\mathrm{V}^{'}}_{\mathrm{INT1}}\left({N}\right)\nonumber\\ ={\mathrm{V}}_{\mathrm{RES}}\left({N}\right)+{\mathrm{V}}_{\mathrm{INT1}}\left({N-1}\right). $

Transforming Eq. (3) into the z-domain gives the following equation

(4)
$ \frac{{\mathrm{V}}_{\mathrm{INT1}}\left(\mathrm{z}\right)}{{\mathrm{V}}_{\mathrm{RES}}\mathrm{(z)}}= \frac{1}{1-{\mathrm{z}}^{-1}}. $

In the operation of the second integrator, the second integrator remains idle while the first integrator performs integration in $\Phi_{1}$, during which the C${}_{\rm DAC}$ holds V${}_{\rm INT1^{'}}(N)$.

During $\Phi_{2}$ for integration, charge sharing with C${}_{\rm DAC}$ {}and C${}_{\rm INT2A}$ produces the second intermediate voltage V${}_{\rm INT2^{'}} (N)$, expressed as Eqs. (5) and (6):

(5)
${\mathrm{C}}_{\mathrm{DAC}}\cdot{\mathrm{V}^{'}}_{\mathrm{INT1}}({N})+{\mathrm{C}}_{\mathrm{INT2A}}\cdot{\mathrm{V}}_{\mathrm{INT2}}\left({N-1}\right) \nonumber\\ = \left({\mathrm{C}}_{\mathrm{DAC}}+{\mathrm{C}}_{\mathrm{INT1A}}\right)\cdot{{\mathrm{V}}^{{'}}}_{\mathrm{INT2}}\left({N}\right), $
(6)
$ {{\mathrm{V}}^{{'}}}_{\mathrm{INT2}}\left({N}\right)=\frac{{1}}{{4}}{\mathrm{V}}_{\mathrm{INT1}}\left({N}\right)+\frac{{1}}{{2}}{\mathrm{V}}_{\mathrm{INT2}}\left({N-1}\right). $

Subsequently, during $\Phi_{3}$, compensation occurs in the second integrator. As a result, V${}_{\rm INT2}(N)$ becomes

(7)
${\mathrm{V}}_{\mathrm{INT2}}\left({N}\right)=2{\mathrm{V}^{'}}_{\mathrm{INT2}}\left({N}\right)\nonumber\\ =\frac{1}{{2}}{\mathrm{V}}_{\mathrm{INT1}}\left({N}\right)+{\mathrm{V}}_{\mathrm{INT2}}\left({N-1}\right).$

Unlike V${}_{\rm INT1}$(N) in Eq (3), Eq (7) shows that the integration voltage V${}_{\rm INT2}$(N) is attenuated by a factor of two, even after compensation.

Fig. 4. Signal flow of the proposed second-order NS-SAR ADC.

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Fig. 4 presents the signal flow of the proposed second-order NS-SAR ADC, illustrating the attenuation and gain factors denoted as (a)-(e). In the first integrator, although charge sharing between the C${}_{\rm DAC}$ and C${}_{\rm INT1A/B}$ causes voltage attenuation, compensation enables lossless integration. However, in the second integrator, the loss caused by charge sharing between the C${}_{\rm DAC}$ and C${}_{\rm INT2A/B}$ is not fully compensated, despite the compensation being applied in the same manner as in the first integrator. To achieve an ideal second-order integration, a gain of two compensation is applied to V${}_{\rm INT2}$ by designing the comparator input paths to have specific relative gain as follows:

(8)
$ {\mathrm{2V}}_{\mathrm{INT2}}\left({N}\right)={\mathrm{V}}_{\mathrm{INT1}}\left({N}\right)+{\mathrm{2V}}_{\mathrm{INT2}}\left({N-1}\right). $

The corresponding z-domain expression is given in

(9)
$ {\mathrm{2V}}_{\mathrm{INT2}}\left(\mathrm{z}\right)=\frac{\mathrm{1}}{\mathrm{1-}{\mathrm{z}}^{\mathrm{-}\mathrm{1}}}{\mathrm{V}}_{\mathrm{INT1}}\left(\mathrm{z}\right)= \frac{\mathrm{1}}{{\left(\mathrm{1-}{\mathrm{z}}^{\mathrm{-}\mathrm{1}}\right)}^{\mathrm{2}}}{\mathrm{V}}_{\mathrm{RES}}\left(\mathrm{z}\right). $

The multi-path comparator combines V${}_{\rm INT1}$(z), V${}_{\rm INT2}$(z), and V${}_{\rm IN}$(z) --- the input voltage sampled on the C${}_{\rm DAC}$ --- with the quantization error Q(z) to generate D${}_{\rm OUT}$(z) as follows:

(10)
$ {\mathrm{D}}_{\mathrm{OUT}}\left(\mathrm{z}\right)={\mathrm{V}}_{\mathrm{IN}}\left(\mathrm{z}\right)+{\left(1-{\mathrm{z}}^{-1}\right)}^{2}\mathrm{Q}\left(\mathrm{z}\right). $

IV. CIRCUIT IMPLEMENTATION

1. Proposed NS SAR ADC

Fig. 5 illustrates the schematic and timing diagram of the proposed ADC. The proposed NS-SAR ADC consists of a coarse SAR ADC, a 4-bit dynamic weight averaging (DWA) logic [11], and fine SAR ADC with loop filter. In the proposed NS-SAR ADC, capacitor mismatch in the C${}_{\rm DAC}$ is dominant in the most significant bit (MSB) region, which significantly affects linearity [12]; therefore, DWA is applied only to the 4 MSBs considering the target resolution and logic complexity. The fine SAR ADC consists of a C${}_{\rm DAC}$, a loop filter, a multi-path comparator, and SAR logic. It performs a 6-bit conversion, including one redundant bit that covers 16 LSBs to mitigate the effect of comparator offset mismatch between the coarse and fine SAR ADCs. The multi-path comparator in the fine SAR ADC sums the C${}_{\rm DAC}$ residual voltage V${}_{\rm RES}$ with the integrated signals V${}_{\rm INT1}$ and V${}_{\rm INT2}$, with relative gains of 1, 1, and 2, respectively, as in [6].

In the $N${th} cycle of the timing diagram in Fig. 5, the proposed SAR ADC operates as follows. During the sampling phase $\Phi_{\rm S}$, the input signal is sampled through a bootstrapped switch shared by both the coarse and fine SAR ADCs. During four $\Phi_{C1}$ phases, the coarse SAR ADC performs a 4-bit asynchronous conversion. In phase $\Phi_{D}$, the DWA logic operates based on the coarse SAR ADC outputs to generate a 15-bit thermometer code that switches fifteen 16C${}_{U}$ segments in the C${}_{\rm DAC}$ array of the fine SAR ADC. Following that, during six $\Phi_{C2}$ phases, the comparator of the fine SAR ADC operates asynchronously, and its output is processed by the SAR logic to control the C${}_{\rm DAC}$, thereby obtaining a 6-bit digital code. In $\Phi_{1}$, charge sharing between the C${}_{\rm DAC}$ and C${}_{\rm INT1A}$ generates the first intermediate voltage, as described in Eq. (2). In $\Phi_{2}$, the first intermediate voltage is compensated and then sampled onto C${}_{\rm INT1B}$ as V${}_{\rm INT1}$, representing the first integration voltage. Simultaneously, in $\Phi_{2}$, charge sharing between the C${}_{\rm DAC}$ and C${}_{\rm INT2A}$ in the second integrator produces the second intermediate voltage, as shown in Eq (6), which is then compensated in $\Phi_{3}$ and sampled onto C${}_{\rm INT2B}$ as V${}_{\rm INT2}$.

Subsequently, in the $(N+1)${th} cycle, following the sampling phase $\Phi_{\rm S}$, four $\Phi_{C1}$ phases and $\Phi_{D}$ proceed sequentially in the same manner as in the N${}^{th}$ cycle. $\Phi_{4}$ stays high from the falling edge of $\Phi_{\rm S}$ to the falling edge of the sixth $\Phi_{C2}$, which corresponds to the end of the fine SAR conversion. During this period, the voltage on the C${}_{\rm DAC}$ top plate, along with V${}_{\rm INT1}$ and V${}_{\rm INT2}$, is fed into the multi-path comparator. During the subsequent phases $\Phi_{5}$-$\Phi_{7}$, C${}_{\rm INT1A}$, and C${}_{\rm INT2A}$ are configured as a second-order integrator to generate V${}_{\rm INT1}$ and V${}_{\rm INT2}$, respectively, unlike in the N${}^{th}$ cycle where C${}_{\rm INT1B}$ and C${}_{\rm INT2B}$ are used.

To ensure consistent gain between the first and second integrators, all internal nodes of the amplifier must be sufficiently settled before operation begins. Without proper settling, the amplifier may exhibit different gain characteristics during $\Phi_{2}$ and $\Phi_{6}$ (for the first integrator) and $\Phi_{3}$ and $\Phi_{7}$ (for the second integrator), which are responsible for compensation. Such gain mismatch may degrade integration accuracy and overall linearity. To address this, $\Phi_{A}$ is activated early at the rising edges of $\Phi_{1}$ and $\Phi_{5}$, allowing sufficient settling time. The amplifier is then turned off at the falling edges of $\Phi_{3}$ and $\Phi_{7}$ after integration completes. Compared to the use of dedicated amplifiers, which require their own early turn-on for each, the proposed shared amplifier operates with about 25% reduced power consumption for integrations.

Fig. 5. Schematic and timing diagram of the proposed NS-SAR ADC.

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2. Fully-differential Flipped Voltage Follower

Fig. 6(a) shows the schematic of the FD-FVF, modified from [13], which is employed in the loop filter. To reduce static power consumption by enabling dynamic operation, S${}_{\rm R1}$ and S${}_{\rm R2}$ switches, which are driven by the amplifier clock signal $\Phi_{\rm A}$, are employed. The reset-free operation of the FD-FVF amplifier enables its sharing between the first and second integrators. In the dynamic amplifier scheme [9], the gain depends on the amplification time. In contrast, the FD-FVF provides a gain set by its transconductance and output resistance, as long as all internal nodes are fully settled, which mitigates the impact of clock jitter [13]. The linearity of amplifier is enhanced by shunt--shunt feedback networks formed by transistors M1, M3, M5 and M2, M4, M6, which stabilize the gate--source voltages of the input pair.

Fig. 6(b) shows the simulated gain variation across PVT conditions, where $-40^\circ$C and $85^\circ$C correspond to the cold and hot corners, respectively. Across all process corners and under $\pm 10$% supply variations, the Signal-to-Quantization-Noise Ratio (SQNR) variation remains within $-1.3$ dB, which has a negligible impact on the ADC performance.

Fig. 6. Schematic of the FD-FVF (a) and simulated gain against power supply and process corner variations (b).

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3. Multi-path Comparator

As shown in Fig. 7, a multi-path comparator modified from [6] and [14] is used in the NS-SAR ADC to perform voltage summation. The input transistors(M13-M18) and the switches(M1-M3) connected to their sources are sized with specific ratio to enable voltage summation at T${}_{\rm P}$ and T${}_{\rm N}$ with relative gain, as in [6]. Intermediate transistors M6 and M9 provide electrical isolation between the input and latching stages, effectively mitigating kickback noise [14].

Fig. 7. Schematic of the multi-path comparator.

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During the reset phase ($\Phi_{\rm C} =$ low), the T${}_{\rm P}$ and T${}_{\rm N}$ nodes are pre-charged to V${}_{\rm DD}$. Meanwhile, M6 and M9 discharge the output nodes OUT${}_{\rm P}$ and OUT${}_{\rm N}$ to ground. When $\Phi_{\rm C}$ transitions to high, transistors M1-M3, and M12 are enabled while M4 and M5 are turned off. Subsequently, the input transistors M13, M15, and M17---connected to V${}_{\rm RESP}$, V${}_{\rm INT1P}$, and V${}_{\rm INT2P}$, respectively---discharge the T${}_{\rm P}$ node with currents proportional to their sizing ratios, applying gain to each input. Similarly, M14, M16, and M18---connected to V${}_{RESN}$, V${}_{\rm INT1N}$, and V${}_{\rm INT2N}$---discharge the T${}_{\rm N}$ node. As T${}_{P}$ and T${}_{\rm N}$ are discharged, M7 and M8 can no longer clamp the comparator outputs OUT${}_{\rm P}$ and OUT${}_{\rm N}$ to ground, enabling the back-to-back inverter pair formed by M7--M11 to latch decision as described in [14].

V. MEASUREMENT RESULTS

Fig. 8 shows the die photograph and layout of the fabricated prototype NS-SAR ADC. The chip was fabricated in a 28 nm CMOS process and occupies an active area of 0.101 mm$^2$.

Fig. 8. Die photograph and layout.

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Fig. 9 shows the measured FFT output spectrum when a 996 kHz and $-2.1$ dBFS input signal is applied. The measured SNDR and spurious-free dynamic range (SFDR) are 66.1 dB and 71.8 dB, respectively. The achieved bandwidth is 8.3 MHz with an over-sampling ratio (OSR) of 6. Fig. 10 shows the measured signal to noise ratio (SNR) and SNDR with different amplitudes of input. The peak values of SNR and SNDR are measured 67.9dB and 66.1dB respectively. The measured dynamic range (DR) is 69.8dB. Fig. 11 illustrates the detailed power breakdown. The total power consumption is 2.93 mW operating at a sampling rate of 100 MHz with a 1 V supply. The integrator consumes 1.66 mW, accounting for 57% of the total power consumption.

Fig. 9. Measured FFT output spectrum.

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Fig. 10. Measured SNR/SNDR versus input amplitude.

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Fig. 11. Measured power breakdown.

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Based on these measurement results, the calculated Walden figure-of-merit (FoM${}_{\rm W}$) is 107.0 fJ/conversion-step, and the Schreier FoM (FoM${}_{\rm S}$) is 160.6 dB. Table 1 summarizes and compares the performance of the proposed ADC against prior works.

Table 1. Performance comparison table.

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VI. CONCLUSIONS

This paper demonstrates a second-order NS-SAR ADC that achieves lossless integration. A shared amplifier combined with a ping-pong switched-capacitor integrator enables the realization of an ideal second-order noise transfer function while reducing loop filter area. The prototype, implemented in 28 nm CMOS, achieves an 8.3 MHz bandwidth and 66.1 dB SNDR while operating at 100 MHz with an OSR of 6, consuming 2.93 mW in a 0.101 mm$^2$ area.

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Young-Hwan Lee
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Young-Hwan Lee received his B.S. degree in electronic engineering from Sogang University, Seoul, Korea, in 2016, where he is currently pursuing an M.S. degree. In addition, he works as a Staff Engineer in CMOS Image Sensor Applications at System LSI, Samsung Electronics, Hwaseong, South Korea. His current research interests include low-power and high-speed analog-to-digital converters.

Jae-Geun Lim
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Jae-Geun Lim received his B.S. and Ph.D. degrees in electronic engineering from Sogang University, Seoul, Korea, in 2019, and 2025. He is currently with the Samsung Electronics Co., Ltd. and his current research interests include high-speed data converter and mixed-signal circuits.

Hyoung-Jung Kim
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Hyoung-Jung Kim received his B.S. degree in electronic engineering from Sogang University, Seoul, Korea, in 2020, where he is currently pursuing a Ph.D. degree. Mr. Kim is a recipient of a scholarship sponsored by Samsung electronics. His current interests are in the design of low-power and high-speed analog-to-digital converter.

Jae-Hyuk Lee
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Jae-Hyuk Lee received his B.S. degree in electronic engineering from Sogang University, Seoul, Korea, in 2020, where he is currently pursuing a Ph.D. degree. Mr. Lee is a recipient of a scholarship sponsored by Samsung electronics. His current interests are in the design of high-speed, high-resolution CMOS data converters, and very high-speed mixed-mode integrated systems.

Seong-Bo Park
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Seong-Bo Park received his B.S. degree in electronic engineering from Sogang University, Seoul, Korea, in 2022, where he is currently pursuing a Ph.D. degree. Mr. Park is a recipient of a scholarship sponsored by Samsung electronics. His current research interests include data converters, and sensor interfaces.

Seong-U Choi
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Seong-U Choi received his B.S. degree in electronic engineering from Sogang University, Seoul, Korea, in 2022, where he is currently pursuing a Ph.D. degree. His current research interests include high-speed data converters, and sensor interfaces.

Joo-Yeul Yang
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Joo-Yeul Yang received his B.S. and M.S. degrees in electronic engineering from Sogang University, Seoul, Korea, in 2023 and 2025, respectively. He is now an Engineer at Memory Division, Samsung Electronics, Hwaseong, Korea. His current research interests include data converters and mixed-signal circuit design.

Jun-Ho Boo
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Jun-Ho Boo received his B.S. and Ph.D. degrees in electronic engineering from Sogang University, Seoul, Korea, in 2017 and 2023 respectively. From 2023 to 2025, he was a Staff Engineer at Memory Division, Samsung Electronics, Hwaseong, Korea. Currently, he is an Assistant Professor in the Division of Semiconductor and Electronics Engineering, Hankuk University of Foreign Studies. His current research interests include analog and mixed-signal circuits, data converters, and sensor interfaces.

Gil-Cho Ahn
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Gil-Cho Ahn received his B.S. and M.S. degrees in electronic engineering from Sogang University, Seoul, Korea, in 1994 and 1996, respectively, and a Ph.D. degree in electrical engineering from Oregon State University, Corvallis, in 2005. From 1996 to 2001, he was a Design Engineer at Samsung Electronics, Kiheung, Korea, working on mixed analog-digital integrated circuits. From 2005 to 2008, he was with Broadcom Corporation, Irvine, CA, working on AFE for digital TV. Currently, he is a Professor in the Department of Electronic Engineering, Sogang University. His research interests include high-speed, high-resolution data converters and low-voltage, low-power mixed-signal circuits design.