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The Journal of Semiconductor Technology and Science (JSTS) is an international, peer-reviewed, and open-access journal that is published bimonthly.
- Scope: semiconductor processes, devices, circuits, and MEMS.
- Editor-in-Chief: Prof. Woo Young Choi (ECE, Seoul National University)
- Indexed within Science Citation Index Expanded (SCIE), SCOPUS, Korea Citation Index (KCI), and other databases.

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Title Demonstration of Performance Enhancement in Semiconductor Devices Utilizing TiO2-Based High-k Triple-Layer Dielectric
Authors (Seong Kyum Kim) ; (Seul Ki Hong)
DOI https://doi.org/10.5573/JSTS.2026.26.1.24
Page pp.24-28
ISSN 1598-1657
Keywords Semiconductor device; high-k dielectric; leakage current; band gap; dielectric constant
Abstract In order to compensate for the trade-off relationship between the dielectric’s bandgap and its dielectric constant, a triple-layer dielectric structure composed of high-k dielectrics including TiO2 was simulated. It was verified that an optimal balance between leakage current and device performance could be found by using a MOS capacitor structure with the multiple dielectric layers. Additionally, drain current analysis using a MOSFET structure confirmed that this approach can enhance electrical properties compared to using a single layer dielectric.
This study suggests a process method that offers more options for satisfying device performance requirements and indicates its potential for application in various fields.