ParkBoseong1
HongSoonseong1
ChaHyouk-Kyu1
-
(Department of Electrical and Information Engineering, Seoul National University of
Science and Technology, Seoul, Korea)
Copyright © The Institute of Electronics and Information Engineers(IEIE)
Index Terms
Neural recording IC, adaptive gain control, common-mode cancellation loop, low-noise amplifier, artifact tolerance
I. INTRODUCTION
The bidirectional neural interface has been the subject of extensive research for
the diagnosis and treatment of neurological and psychiatric diseases such as epilepsy
and seizures [1-10]. In the case of a typical neural recorder, the following factors need to be considered
during the design process. First, it must be designed for low power consumption. Neural
recorders are often configured with multiple channels, and if excessive power is consumed,
it could lead to tissue damage. Thus, to operate several dozen to hundreds of channels
simultaneously, limited amount of power in the micro-watt range may be allocated for
each amplifier. Another important consideration is the need for low-noise performance.
The desired signals exist in the range of tens of $\mu$V to several mV in amplitude
and within the frequency band of 1 Hz to 10 kHz. To capture these input signals, both
high gain and low noise performance are essential. Typically, neural recorders require
input reference noise performance in the range of 5 to 10 $\mu$V$_{\rm rms}$ in the
1 Hz to 10 kHz frequency band [1].
The bidirectional neural interface consists primarily of a neural recorder and a neural
stimulator. In order for the stimulator to deliver sufficient amount of current to
the high impedance electrode-tissue interface, the output voltage of the neural stimulator
can be quite large, ranging from a few volts to tens of volts. This output voltage
can result in significant stimulation artifacts through the cerebrospinal fluid (CSF)
via direct conduction pathways, which can appear as large artifacts in the recorder
[2-8]. Specifically, CM artifacts can reach up to 450-600 mV${}_{\rm PP}$, while DM artifacts
can range from 45 to 60 mV${}_{\rm PP}$ [3]. As a result, the neural recorder may become saturated and fail to operate correctly.
Therefore, bidirectional neural interfaces must be designed to tolerate such stimulation
artifacts. Reference [4] categorizes artifact removal methods into four main approaches: filtering, template
subtraction, overdesign, and blanking. Each method has its pros and cons and should
be designed based on the specific characteristics. The filtering method requires high-order
low-pass filters to reduce the harmonic frequencies of stimulation artifacts, making
it unsuitable for detecting higher-frequency spike signals [5]. The template subtraction method requires pre-learning of stimulation artifacts before
the artifacts can be removed in the subsequent front-end input [6]. The blanking method involves blocking and disabling the recorder when the stimulator
operates, which results in signal loss during the blocking moments [7]. The overdesign method records both stimulation artifacts and neural noise floor
simultaneously, aiming to remove the artifacts during post-processing [3,8]. Generally, in analog front-ends where neural amplifiers are placed, a high-gain
amplifier is positioned at the front and a low-resolution ADC at the back to reduce
the overall power consumption of the circuit. However, in the overdesign method, the
neural recorder places a low-gain amplifier with a wide operating range to record
even the artifacts, and a high-resolution ADC is used at the back end [8], which raises the design complexity of the ADC.
This study proposes a neural recording amplifier utilizing adaptive gain control and
a feedback-based common mode cancellation loop (CMCL), which operates at maximum gain
and excellent noise performance under normal conditions. In cases where artifacts
occur, it can remove the CM components and, if necessary, lower the gain before the
amplifier saturates, thereby extending the amplifier's dynamic range (DR).
The structure of this paper is as follows. Section II explains the main circuit design
of the proposed neural amplifier in detail, while Section III presents the post-layout
simulation results and compares them with previous similar works. Finally, Section
IV concludes the paper.
II. CIRCUIT DESIGN
Fig. 1 shows the block diagram of the proposed neural recording amplifier circuit. The proposed
circuit can be broadly divided into two main parts: the AC-coupled capacitive-feedback
low-noise amplifier (LNA) with adaptive gain control, which dominates the overall
noise performance of the circuit, and the common mode rejection unit, which includes
the feedback-based CMCL.
The LNA is designed as a two-stage transconductance amplifier consisting of G${}_{\rm
m1}$ and G${}_{\rm m2}$, and it consumes 78% of the total power used by the entire
circuit for low noise characteristics. Fig. 2(a) shows the circuit diagram of G${}_{\rm m1}$, which uses an inverter-based OTA with
a current reuse technique, a structure known for its good noise performance [9,10,12]. For G${}_{\rm m2}$, shown in Fig. 2(b), a 5-transistor fully differential OTA structure is used to ensure an adequate output
range. The gain of the LNA is adjusted by controlling the feedback capacitor value
through an envelope detector, four comparators, and a digital logic circuit.
The common mode rejection unit consists of the traditional CMCL circuit and an additional
unit to control the on/off state of the CMCL. The CMCL is a feedback-based structure
that uses a current mirror structure (A${}_{\rm CM}$), and the CMCL on/off control
unit detects the common mode (CM) components coming into the LNA input, compares the
size of the detected CM components, and adjusts the switch on/off through a digital
logic circuit.
Fig. 1. Overall simplified structure of the proposed neural recording amplifier.
Fig. 2. Schematic of (a) G${}_{\rm m1}$ (b) G${}_{\rm m2}$.
1. Adaptive Gain Control LNA
Fig. 3 shows the adaptive gain control LNA constructed with a cross-coupled feedback capacitor.
The LNA is designed with a maximum gain of 40 dB to capture small neural signals.
With such a high gain, if large differential artifacts ranging from a few mV to several
tens of mV are introduced at the input, the output will quickly saturate. The proposed
LNA maintains a gain of 40 dB under normal conditions, but if the amplified output
suddenly increases and reaches a certain threshold, the gain will be reduced by one
step. After the output amplitude decreases and the envelope falls below a specific
threshold after a certain period, the gain will return to the original 40 dB. The
gain adjustment process occurs in four stages: 40 dB, 26.02 dB, 20.92 dB, and 17.72
dB.
Fig. 4 presents the circuit diagram of the envelope detector, designed based on a cross-coupled
differential-driven rectifier structure [11]. This block is designed to automatically adjust the LNA's gain and determine when
to return to the original state. The envelope follows the rapid rise of the LNA output,
and once the output stabilizes at a lower gain level, the envelope drops accordingly.
This allows the system to return to the original gain when the signal level is sufficiently
maintained.
Fig. 5 illustrates the gain adjustment decision block, which consists of four comparators,
three SR latches, and several logic gates. The PEAK signal from the envelope detector
is compared with two thresholds, DM_Limit_P (800 mV) and DM_safe_P (520 mV), to determine
the gain adjustment operation based on the comparison results.
Fig. 3. Schematic of the proposed adaptive gain control LNA.
Fig. 4. Schematic of envelope detector.
Fig. 5. Schematic of gain control logic unit.
2. Common-mode cancellation unit
Fig. 6 shows the components of the common-mode cancellation unit. It consists of the CMCL
circuit that removes CM artifacts and the circuitry that detects the magnitude of
the CM components entering the input and controls the on/off state of the CMCL. The
CM artifacts that enter the LNA input operate as a source follower and appear at the
source terminal of the input transistor. This CM signal is inputted to the CMCL amplifier
(A${}_{\rm CM}$) through the S${}_{np}$ terminal, and its output is fed back to the
input of G${}_{\rm m1}$. As a result, the input of G${}_{\rm m1}$ operates as a negative
feedback loop from the CM signal perspective, leaving only the error signal at the
input of G${}_{\rm m1}$ [13,14]. If the output of the A${}_{\rm CM}$ amplifier does not saturate, it can be expressed
as follows:
where the output of the A${}_{\rm CM}$ amplifier, V${}_{\rm Acm}$, is given by
In this case, the CM components at the input of G${}_{\rm m1}$ are reduced to the
error component, which approaches zero. The CMCL effectively removes the CM component
that negatively affect the neural recorder. However, due to the presence of C${}_{\rm
Acm}$, the input-referred noise (IRN) performance may deteriorate. Therefore, when
the CMCL is unnecessary, a MOS switch is used to break the loop, improving the noise
performance [13].
Fig. 7(a) shows the circuit diagram of the amplifier that detects CM components entering the
neural recorder, and Fig. 7(b) shows its small-signal equivalent circuit. By applying Kirchhoff's current law (KCL)
at the V${}_{\rm CM,sense}$ node, we derive the following equation:
At node V${}_{1}$, the small-signal analysis yields
From the output terminals V${}_{o1}$ and V${}_{o2}$, the following equation is derived
By substituting (3) and (4) into (5), we get
Since sC${}_{1}$C${}_{2}$r${}_{op}$ is much smaller compared to C${}_{1}$ and C${}_{2}$,
it can be approximated as zero, simplifying to
The V${}_{CM_sense}$ signal is then used to control the switch of the CMCL through
a comparator and logic circuit.
This switch-based on/off control of the CMCL has the advantage of removing CM artifacts
when the switch is on, while providing excellent noise performance when the switch
is off. However, this switching behavior can cause a change in the amplifier's bandwidth.
To address this, the circuit is designed to maintain a constant bandwidth of Sub 1
Hz to 10 kHz, even when the CMCL is engaged, by reducing the compensation capacitor
during the switching operation [13].
Fig. 6. Schematic of CMCL control logic unit.
Fig. 7. CM sensing amplifier (a) schematic and (b) small-signal equivalent model.
III. POST-LAYOUT SIMULATION RESULTS
The proposed IC is designed using a 0.18-$\mu$m CMOS process, and Fig. 8 shows the layout of the entire neural recorder, which occupies a total area of 0.36mm${}^{2}$,
including an on-chip unity gain buffer for testing purposes.
Fig. 9 presents the AC simulation results for the proposed LNA at various gain levels. The
LNA can adjust its gain from the typical 40 dB down to a minimum of 17.72 dB. Table 1 lists the total harmonic distortion (THD) of the LNA's output when large differential
signals are input at a fixed gain. The adaptive gain control LNA automatically lowers
its gain when large differential signals lead to higher THD, thus increasing the differential
input range. At a 17.72 dB gain, the LNA maintains a THD of less than 1% even with
a 77 mV${}_{\rm PP}$ differential input.
Fig. 10 illustrates the transient simulation results of the proposed amplifier. In Fig. 10(a), the LNA input is a 1 kHz frequency signal that increases by 1 mV${}_{\rm PP}$ every
2 ms, reaching a maximum of 77 mV${}_{\rm PP}$ before settling at 1 mV${}_{\rm PP}$.
Fig. 10(b) shows that the LNA automatically reduces its gain by one step before saturation and
distortion occur. The envelope signal of the LNA output triggers gain control when
it exceeds a certain threshold (800 mV). Fig. 10(c) shows the waveform where the gain automatically returns to 40 dB after the differential
input decreases. As the differential signal decreases, the envelope signal gradually
drops below a threshold (520 mV), and the gain is restored to its original value.
Fig. 8. Layout of proposed neural recording amplifier.
Fig. 9. Simulated AC response.
Table 1. Simulated LNA output THD.
Gain
|
Diff. input
(1 kHz)
|
Output THD
|
40 dB
|
5.7 mVPP
|
0.925098 %
|
26.02 dB
|
28.6 mVPP
|
0.295842 %
|
20.92 dB
|
51.2 mVPP
|
0.1660374 %
|
17.72 dB
|
77 mVPP
|
0.8219568 %
|
Fig. 10. Simulated transient results (a) LNA differential input signal (max. 77 mV${}_{\rm
PP}$) (b) LNA differential output (c) gain control operation (17.72 dB to 40 dB).
Fig. 11 shows the maximum and minimum output values of the envelope detector circuit in response
to differential inputs at a frequency of 1 kHz. For small inputs below 200 mV${}_{\rm
PP}$, the output peak does not fully track the input amplitude; however, it still
functions properly for detecting the 800 mV threshold. And when the differential input
amplitude is less than 75 mV${}_{\rm PP}$, the minimum output drops below 520 mV.
In this case, if the LNA gain is lower than 40 dB, it returns back to 40 dB.
Fig. 11. Envelope detector output voltage versus input voltage.
Fig. 12 shows ths input noise simulation results of the LNA based on the on/off operation
of the CMCL. The IRN in the 1 Hz -- 10 kHz range is 2.32 $\mu$V${}_{\rm rms}$ when
CMCL is off and 3.57 $\mu$V${}_{\rm rms}$ with CMCL on. In the worst-case scenario,
with a 17.72 dB gain, the IRN is 2.59 $\mu$V${}_{\rm rms}$ with CMCL off and 3.75
$\mu$V${}_{\rm rms}$ with CMCL on.
Fig. 12. Simulated input referred noise with CMCL ON/OFF.
Fig. 13 presents the voltage spectrum simulation results of the amplifier output when a 4
mV${}_{\rm PP}$, 1 kHz differential input signal and a 1 V${}_{\rm PP}$, 50 Hz CM
signal are applied. Due to the CMCL, the CM component is effectively eliminated, with
a $-51.7$ dB difference between the fundamental and third harmonic components, resulting
in a THD of 0.418%.
Fig. 13. imulated output voltage spectrum with CM artifact.
Fig. 14 presents the CMRR simulation results of the proposed neural amplifier, showing a
performance of over 89 dB in the signal frequency band and 115 dB near DC.
Fig. 14. Simulated CMRR of proposed amplifier.
Fig. 15. Overall power consumption of the proposed circuit.
Fig. 15 illustrates the overall power consumption of the proposed circuit. To achieve low
noise performance, the LNA is allocated 1.56 $\mu$W of power, which accounts for 78%
of the total power consumption of 2 $\mu$W.
Table 2 compares the key performance metrics of the proposed amplifier with other existing
studies. Thanks to the flexible gain control, the proposed neural amplifier can operate
with high gain in ideal conditions and extend the differential input range (up to
77 mV${}_{\rm PP}$) through gain control in specific situations. This enables the
use of a lower-resolution ADC at the backend, thereby reducing the overall power consumption
of the system. In general, the noise efficiency factor (NEF) and power efficiency
factor (PEF) are commonly used to evaluate the noise-power trade-off performance of
neural signal recording amplifiers [14]. When compared with previous works using a figure of merit (FoM) that also takes
silicon area into account, the proposed design achieves a FoM below 1.35, demonstrating
excellent overall efficiency. At the same time, it maintains a THD of less than 1%
even with a 1 V$_{\rm PP}$ CM input.
Table 2. Performance summary of the proposed neural recording amplifier and comparison
to previous similar works.
Parameter
|
[3]
|
[6]
|
[8]
|
[14]
|
[15]
|
[16]
|
This work*
|
Supply
|
1.2 V
|
1.2/2.5 V
|
1.2 V
|
0.8 V
|
1.8 V
|
1.8 V
|
1 V
|
Chopping
|
Yes
|
No
|
Yes
|
Yes
|
Yes
|
No
|
No
|
Gain (dB)
|
25.7
|
-
|
26
|
43.3
|
39.3
|
32.67 - 43.41
|
17.72 - 40
|
CMRR
|
-
|
-
|
-
|
> 100 dB
@50 Hz
|
77 dB
(84 dB @ 50 Hz)
|
55.57 dB
|
>89 dB
@10 kHz
|
BW
|
1 Hz - 5 kHz
|
Tunable
< 32 kHz
|
1 Hz - 5 kHz
|
1.2 Hz
- 7.5 kHz
|
<0.1 Hz
- 5 kHz
|
5.7 Hz
- 14 kHz
|
1 Hz - 10 kHz
|
IRN
|
AP:5.3 μVrms
LFP:1.8 μVrms
|
2.9 μVrms
(Calculated over 1-1 kHz BW)
|
AP : 7 μVrms
LFP : 2 μVrms
|
1.2 μVrms
(1 Hz - 650 Hz)
4.1 μVrms
(1 Hz - 7.5 kHz)
|
AP:3.36 μVrms
(200Hz-10kHz)
LFP:1.32 μVrms
(1 Hz - 200 Hz)
|
3.41 μVrms
(10 Hz-10 kHz)
|
2.32a μVrms
(1 Hz - 10 kHz)
3.57b μVrms
(1 Hz - 10 kHz)
|
NEF / PEF
|
AP
4.4 / 23.23
LFP
7.4 / 65.71
|
-
|
AP
4.9 / 28.81
LFP
7 / 58.8
|
3.06 / 7.49
(1 Hz - 650 Hz)
3.08 / 7.59
(1 Hz - 7.5 kHz)
|
AP
4.77 / 40.95
|
1.86 / 6.23
|
1.26a / 1.59a
1.94b / 3.76b
|
Max DM input amplitude
|
80 mVPP
|
110 mVPP
|
40 mVPP
|
-
|
-
|
5 mV
|
77 mVPP
|
Artifact Tolerance (CM)
|
650 mVPP
|
-
|
-
|
600 mVPP
|
-
|
-
|
1 VPP
|
THD
|
-76 dB
@80 mVPP
|
-
|
-74 dB
@40 mVPP
|
-65.5 dB
@4 mVPP
|
-65 dB
|
0.22%
@1 kHz, 90% Output
|
-51.7 dB
@4 mVPP DM + 1 VPP CM
|
Power/ch
|
2.8 μW
|
3.21 μW
|
2 μW
|
2.27 μW
|
13.7 μW
|
3.6 μW
|
2 μW
|
Area/ch
|
0.069 mm2
|
0.0025 mm2
|
0.071mm2
|
0.25 mm2
|
0.036 mm2
|
0.26 mm2
|
0.36 mm2
|
Tech.
|
40 nm
|
65 nm
|
40 nm
|
180 nm
|
180 nm
|
180 nm
|
180 nm
|
FoM**
|
1.6
|
-
|
2.05
|
1.87
|
1.47
|
1.62
|
0.57a / 1.35b
|
$^*$Post-layout simulation results $^{**}$FoM $=$ PEF$\cdot$Area (mm$^2$) $^{\rm
a}$CMCL off $^{\rm b}$CMCL on
IV. CONCLUSION
The proposed neural recording amplifier with adaptive gain control and common-mode
cancellation loop is designed using a 180 nm CMOS process and maintains a THD of less
than 1% at 1 V${}_{\rm PP}$ of CM artifacts. The circuit maintains a gain of 40 dB
under ideal conditions and, in the presence of artifacts, automatically controls the
CMCL on/off based on the magnitude of incoming CM components. Simultaneously, it reduces
the gain to a maximum of 17.72 dB before the output saturates due to differential-mode
(DM) artifacts, preserving linearity. Under ideal conditions, the circuit demonstrates
an IRN performance of 2.32 $\mu$V${}_{\rm rms}$ in the 1 Hz -- 10 kHz bandwidth.
ACKNOWLEDGMENTS
This study was supported by the Research Program funded by Seoultech (Seoul National
University of Science and Technology). The authors thank IC Design Education Center
(IDEC) for providing EDA tool.
References
K. S. Guillory and R. A. Normann, ``A 100-channel system for real time detection and
storage of extracellular spike waveforms,'' Journal of Neuroscience Methods, vol.
91, pp. 21–29, 1999.

J.-Y. Son and H.-K. Cha, ``An implantable neural stimulator IC with anodic current
pulse modulation based active charge balancing,'' IEEE Access, vol. 8, pp. 136449-136458,
2020.

H. Chandrakumar and D. Markovi´c, ``An 80-mV$_{\rm pp}$ linear-input range, 1.6- G$\Omega$
input impedance, low-power chopper amplifier for closed-loop neural recording that
is tolerant to 650-mV$_{\rm pp}$ common-mode interference,'' IEEE Journal of Solid-State
Circuits, vol. 52, no. 11, pp. 2811-2828, Nov. 2017.

M. Bandali and B. C. Johnson, ``An artifact-resilient neural recording front-end with
rail-to-rail DM and CM offset correction,'' Proc. of IEEE International Symposium
on Circuits and Systems (ISCAS), Monterey, CA, USA, pp. 1-5, 2023.

S. StanslaskiP. Afshar, P. Cong, J. Giftakis, P. Stypulkowski, and D. Carlson, ``Design
and validation of a fully implantable, chronic, closed-Loop neuromodulation device
with concurrent sensing and stimulation,'' IEEE Transactions on Neural Systems and
Rehabilitation Engineering, vol. 20, no. 4, pp. 410-421, July 2012.

J. P. Uehlin, W. A. Smith, V. R. Pamula, E. P. Pepin, S. Perlmutter, and V. Sathe,
``A single-chip bidirectional neural interface with high-voltage stimulation and adaptive
artifact cancellation in standard CMOS,'' IEEE Journal of Solid-State Circuits, vol.
55, no. 7, pp. 1749-1761, July 2020.

N. Pérez-Prieto, M. Delgaso-Restituto, and A. Rodríguez-Vázquez, ``Artifact-aware
analogue/mixed-signal front-ends for neural recording applications,'' Proc. of IEEE
International Symposium on Circuits and Systems (ISCAS), Sapporo, Japan, pp. 1-5,
2019.

H. Chandrakumar and D. Markovi´c, ``A high dynamic-range neural recording chopper
amplifier for simultaneous neural recording and stimulation,'' IEEE Journal of Solid-State
Circuits, vol. 52, no. 3, pp. 645-656, March 2017.

H. S. Kim and H.-K. Cha, ``An ultra low-power low-noise neural recording analog front-end
IC for implantable devices,'' Journal of Semiconductor Technology and Science, vol.
18, no. 4 , pp. 454-460, 2018.

L. Tran and H.-K. Cha, ``An ultra-low-power neural signal acquisition analog front-end
IC,'' Microelectronics Journal, vol. 107, 104950, Jan. 2021.

K. KotaniA. Sasaki, and T. Ito, ``High-efficiency differential-drive CMOS rectifier
for UHF RFIDs,'' IEEE Journal of Solid-State Circuits, vol. 44, no. 11, pp. 3011-3018,
Nov. 2009.

J.-Y. Son and H.-K. Cha, ``An ultra low-power low-noise neural signal acquisition
amplifier for ECoG applications,'' IDEC Journal of Integrated Circuits and Systems
(JICAS), vol. 9, no. 4, pp. 44-48, Oct. 2023.

S. Hong and H. Yoo, ``A highly reconfigurable signal acquisition analog front-end
IC for bidirectional neural interface SoCs,'' Journal of Semiconductor Technology
and Science, vol. 24, no. 6 , pp. 532-539, 2024.

D. Luo, J. Lei, M. Zhang, and Z. Wang, ``Design of a low noise bio-potential recorder
with high tolerance to power- line interference under 0.8 V power supply,'' IEEE Transactions
on Biomedical Circuits and Systems, vol. 14, no. 6, pp. 1421–1430, Dec. 2020.

S. Reich, M. Sporer, and M. Ortmanns, ``A chopped neural front-end featuring input
impedance boosting with suppressed offset-induced charge transfer,'' IEEE Transactions
on Biomedical Circuits and Systems, vol. 15, no. 3, pp. 402-411, June 2021.

H.-S. Lee, K. Eom, M. Park, S.-B. Ku, K. Lee, and T. Kim, ``A multi-channel neural
recording system with neural spike scan and adaptive electrode selection for high-density
neural interface,'' IEEE Transactions on Circuits and Systems I: Regular Papers, vol.
70, no. 7, pp. 2844-2857, July 2023.

Boseong Park received his B.S. degree from the Department of Electrical and Information
Engineering (EIE) at Seoul National University of Science and Technology (SEOULTECH),
Seoul, Korea, in 2024. He is currently pursuing an M.S. degree with the Department
of EIE at SEOULTECH. His interests include neural interface circuits and ultra-low-power
analog circuit design.
Soonseong Hong received his B.S. and M.S. degrees from the Department of Electrical
and Information Engineering (EIE) at Seoul National University of Science and Technology
(SEOULTECH), Seoul, Korea, in 2022 and 2024, respectively. In 2024, he joined Samsung
Electronics, Korea, as an analog IC design engineer. His interests include neural
interface circuits and ultra-low-power analog circuit design.
Hyouk-Kyu Cha received his B.S. and Ph.D. degrees in electrical engineering at
Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea, in 2003
and 2009, respectively. From 2009 to 2012, he was a Scientist with the Institute of
Microelectronics, (IME), Agency for Science, Technology, and Research (A*STAR), Singapore,
where he was involved in the research and development of analog/RF ICs for biomedical
applications. Since 2012, he has been with the Department of Electrical and Information
Engineering, Seoul National University of Science and Technology, Seoul, Korea, where
he is now a Professor. His research interests include low-power CMOS analog/RF IC
and system design for biomedical devices.