DoQuang-Huy1
                     NgoTan-Binh1
                     YoonSang-Woong1
               
                  - 
                           
                        (Electronic Engineering Department, Kyung Hee University, Yongin-si, Gyeonggi-do 17104,
                        Republic of Korea)
                        
 
               
             
            
            
            Copyright © The Institute of Electronics and Information Engineers(IEIE)
            
            
            
            
            
               
                  
Index Terms
               
                Circulator IC,  linear periodic time variation,  non-reciprocal,  staggered commutation network
             
            
          
         
            
                  I. INTRODUCTION	
               In electronics, passive elements such as resistor, inductor, and capacitor are characterized
                  as linear, time-invariant, and reciprocal. This reciprocity arises from their fabrication
                  using conventional material that possess symmetric permittivity and permeability tensors.
                  Traditionally, in wireless component design, the breaking of Lorentz reciprocity has
                  been achieved by utilizing ferrite material with an external magnetic field bias,
                  as seen in devices like isolators and circulators. However, ferrite-based devices
                  are bulky and incompatible with CMOS IC fabrication, which limits their effectiveness.
                  Additionally, the antenna interface for full-duplexing wireless communication system
                  is crucial and can be realized through various means such as antenna pairs [1], shared antenna interfaces like the electrical balance duplexer [2] or circulator [3].
               
               This study focuses on effectively integrating the circulator device into the CMOS
                  system. Nonreciprocal passive circulators employing ferrite materials [4] have demonstrated excellent performance in terms of high linearity and low loss.
                  However, they are not amenable to CMOS technology for integration. Furthermore, circulators
                  that utilize the nonreciprocity of active transistors [3,5] suffer from high noise and poor linearity [6]. Nonlinear approaches have also been explored in optical communication systems [7], but they lead to a limited input power range and suffer from dynamic reciprocity
                  [8]. Therefore, the need for a circulator with low noise, high linearity, and high isolation
                  remains an ongoing challenge to researchers.
               
               Linear periodically time-varying (LPTV) circuits have emerged as a solution to address
                  the challenges of achieving magnet-less non-reciprocity. These circuits offer the
                  potential for high performance, low cost, and compact size. Recent research has explored
                  the development of magnetic-free non-reciprocal circulators based on staggered commutation
                  with all-pass filter type [9] or N-path BPF type [10] networks.
               
               In this work, we present a fully integrated circulator IC including not only multi-path
                  staggered commutation networks but also artificial lumped-element transmission lines,
                  which results in ultra-compact solution.
               
             
            
                  II. DESIGN AND ANALYSIS	
               To design a fully integrated circulator in CMOS technology,  we used linear periodic
                  time-variant (LPTV) property of band-pass filter (BPF) type gyrator in a staggered
                  commutation network which was implemented in N-path switched capacitor array.
               
               
                     A.	BPF type gyrator
                  Fig. 1 shows a two-port commutated N-path switched-capacitor network realized by using $N$
                     identical branches of a switch-capacitor-switch structure. The output switches are
                     delayed with respect to the input set by $\Delta T > T_{s}/N$, where the value of
                     $N$ is the number of the path and $T_{s}$ is the switching period. This network subjected
                     to spatial-temporal modulation, can operate as a bandpass filter (BPF). The duration
                     during which each switch is closed should be significantly shorter than the time constant
                     of the shunt capacitor, $\tau \gg T_{s}/N$ [11]. Increasing N enhances the filter performance [12]. In this work, considering the circuit complexity and loss, the network was designed
                     with four paths.
                  
                  Fig. 2 shows a four-path two-port BPF-based gyrator using NMOS switches. The capacitance
                     was chosen to satisfy the condition of the bandpass filtering characteristic, $C \gg
                     1/(2\pi\cdot f_{s}\cdot Z_{0})$, where $f_{s}$ is the operation frequency and $Z_{0}$
                     is the characteristic impedance of the system. The switches were driven by clocks
                     having four phases with the duty cycle of 25%. Two clock sets (LO a$<1:4>$ and LO
                     b$<1:4>$) had the phase shift of $90^\circ$. The switch design was optimized considering
                     on-resistance and parasitic capacitance.
                  
                  The complete $S$-parameter of the gyrator can be expressed as [6]
                  
                  The $S$-parameter matrix reveals that the magnitudes of ${S}_{12} $and ${S}_{21}$
                     are reciprocal, but their phases are non-reciprocal. Fig. 3 shows magnitude and phase response with S-parameter simulations. In Fig. 3(a), the gyrator exhibits a bandpass filter characteristic with the insertion loss of
                     5 dB and return loss of -15 dB. Fig. 3(b) illustrates the approximate phase difference of $175^\circ$ between $S_{21}$ and
                     $S_{12}$.
                  
                  
                        
                        
Fig. 1. Commutated multipath network.
                      
                  
                        
                        
Fig. 2. BPF type gyrator.
                      
                  
                        
                        
Fig. 3. Simulated results of S-parameters of gyrator.
                      
                
               
                     B.	Clock Signal Generator
                  To provide the required clock signals to the switches, a voltage-controlled oscillator
                     (VCO) was designed for clock signal generation. Fig. 4 shows the circuit topology of the VCO. The VCO consists of a PMOS cross-coupled pair,
                     a capacitor bank digitally controlled by three bits for coarse-tuning, and a varactor
                     bank for analog fine-tuning. The PMOS cross-coupled pair was chosen for low phase-noise
                     characteristic. The isolated bulk terminals and the low mobility of holes of PMOS
                     devices result in inherently less thermal and flicker noise contribution than NMOS
                     devices [13]. The VCO was designed with a supply voltage of 1.2 V and current consumption of 6
                     mA. The simulation results show the center frequency of 9.6 GHz, the phase noise of
                     -106 dBc/Hz at the offset frequency of 100 kHz, and the tunning range of 590 MHz with
                     controlled voltages from 0 to 1.2 V.
                  
                  To design 2.4 GHz clock signals with the duty cycle of 25%, the conventional Johnson-counter-based
                     dividers were employed as shown in Fig. 5. The divide-by-4 dividers were designed with high-speed D flip-flops. Because the
                     clock signals were required to drive large NMOS switches in commutated paths, several
                     buffers were placed right before the switches. To achieve staggered commutation operation
                     for phase non-reciprocity, the delay of $90^\circ$ degree between LO a$<1:4>$ and
                     LO b$<1:4>$ was designed by a digitally-controlled delay line (DCDL) for the coarse-tuning
                     step, and then an analog varactor bank was utilized for fine-tuning. Fig. 6 shows the NAND-based telescopic 5-stage DCDL.
                  
                  
                        
                        
Fig. 4. Configuration of VCO.
                      
                  
                        
                        
Fig. 5. Configuration of divide-by-4 divider.
                      
                  
                        
                        
Fig. 6. Configuration of DCDL.
                      
                  Table 1 summarizes the design parameters.
                  
                  
                        
                        
Table 1. Design parameter summary.
                     
                     
                           
                              
                                 | 
                                    
                                 									
                                  Block 
                                 								
                               | 
                              
                                    
                                 									
                                  Parameter 
                                 								
                               | 
                              
                                    
                                 									
                                  Value 
                                 								
                               | 
                           
                           
                                 | 
                                    
                                 									
                                  BPF type Gyrator 
                                 								
                               | 
                              
                                    
                                 									
                                  Operating frequency 
                                 								
                               | 
                              
                                    
                                 									
                                  2.4 GHz 
                                 								
                               | 
                           
                           
                                 | 
                                    
                                 									
                                  W/L of NMOS switch 
                                 								
                               | 
                              
                                    
                                 									
                                  250 nm/30 nm 
                                 								
                               | 
                           
                           
                                 | 
                                    
                                 									
                                  Capacitor in N-path 
                                 								
                               | 
                              
                                    
                                 									
                                  16 pF 
                                 								
                               | 
                           
                           
                                 | 
                                    
                                 									
                                  Artificial 
                                 									
                                 Transmission Line 
                                 								
                               | 
                              
                                    
                                 									
                                  Inductor 
                                 								
                               | 
                              
                                    
                                 									
                                  3 nH 
                                 								
                               | 
                           
                           
                                 | 
                                    
                                 									
                                  Capacitor 
                                 								
                               | 
                              
                                    
                                 									
                                  1.9 pF 
                                 								
                               | 
                           
                           
                                 | 
                                    
                                 									
                                  Clock Generator 
                                 								
                               | 
                              
                                    
                                 									
                                  VCO center frequency 
                                 								
                               | 
                              
                                    
                                 									
                                  9.6 GHz 
                                 								
                               | 
                           
                           
                                 | 
                                    
                                 									
                                  VCO tunning range 
                                 								
                               | 
                              
                                    
                                 									
                                  590 MHz 
                                 								
                               | 
                           
                           
                                 | 
                                    
                                 									
                                  VCO phase noise 
                                 									
                                 at 1MHz offset 
                                 								
                               | 
                              
                                    
                                 									
                                  -105 dBc/Hz 
                                 								
                               | 
                           
                           
                                 | 
                                    
                                 									
                                  DCDL delay time 
                                 								
                               | 
                              
                                    
                                 									
                                  100 ps 
                                 								
                               | 
                           
                        
                     
                   
                
             
            
                  III. IMPLEMENTATION AND MEASUREMENT	
               The circulator IC was implemented using Samsung 28 nm RF CMOS process. Fig. 7 shows the block diagram of the overall circulator. It consists of three subblocks:
                  lumped-element transmission lines, a four-path two-port BPF type gyrator, and a clock
                  signal generator. The size of the fully integrated transmission lines was miniatured
                  by using high-pass filter type capacitor-inductor-capacitor (C-L-C) network with on-chip
                  metal-insulator-metal (MIM) capacitor and spiral inductor. The inductor was implemented
                  on the top metal layer of thick copper with the inductance of 3 nH. The capacitance
                  was chosen to be 1.9 pF. In the gyrator, the width and length of the NMOS devices
                  were 200 $\mu$m and 0.1 $\mu$m, respectively. The capacitance between the switches
                  was designed to be 16 pF. Fig. 8 shows the microphotograph of the fabricated chip. The overall size is 970 $\mu$m
                  $\times$ 960 $\mu$m excluding all the bonding pads. 
               
               Fig. 9 shows the measured S-parameters with simulation results. Simulations were conducted
                  under not only typical condition (plotted by black and thick lines) but also variation
                  of process, voltage, and temperature (PVT) including CMOS corners of slow, nominal,
                  and fast conditions; supply voltage change by 10%; and temperature range from -$30^\circ$C
                  to $80^\circ$C (plotted by gray and thin lines).
               
               
                     
                     
Fig. 7. Overall block diagram of the fully integrated circulator.
                   
               
                     
                     
Fig. 8. Photograph of the circulator IC.
                   
               
                     
                     
Fig. 9. Measured and simulated results of S-parameters of implemented circulator.
                   
               
                     
                     
Fig. 10. Measured results of noise-figures of implemented circulator.
                   
               The measured circulator characteristics are shown in the narrowband near 2.4 GHz.
                  Among three ports, in the frequency range of 2.39-2.4 GHz, the measured insertion
                  losses are in the range of 4.5-5.5 dB (about 1-2 dB worse than the simulation), while
                  the maximum isolation features are in the range of 35.7-44.8 dB (about 5-8 dB worse
                  than the simulation). These discrepancies are primarily attributed to parasitic components
                  in the devices which could not predict in the simulation because of the device modeling
                  limitation. The large signal performance was measured at the frequency of 2.4 GHz
                  among three ports. IP1dBs were 18.2 dBm (port1-port2), 18.5 dBm (port2-port3), and
                  16.3 dBm (port1-port3). The measured minimum noise-figures were 6.1 dB (port1-port2),
                  5.8 dB (port2-port3), and 9.8 dB (port1-port3) within the frequency range of 2.39-2.4
                  GHz as shown in Fig. 10. The performance between port1 and port3 is the worst because the gyrator circuit
                  is located in the path. The circulator IC consumes 7.2 mW for the VCO block and 14.4
                  mW for the dividers and DCDL block.
               
               Table 2 compares our proposed circulator IC with other designs reported in the literature.
                  Compared to the circulators employing staggered commutation through filters [9,10], integration condition should be considered. The circulator in [9], which relies on external clock signals, shows worse maximum isolation performance
                  by 17.7-35.3 dB than this work. Similarly for the circulator in [10], which used not only external clock signals but also off-chip components to implement
                  transmission lines, the circulator in this work shows lower power consumption by 69%.
                  When this work is compared with fully integrated circulators [14,15], the presented circulator shows better characteristics than the active quasi-circulator
                  [14] in terms of insertion loss, isolation, power dissipation, and size. Even if the integrated
                  transmission lines on the insulator substrate in [15] resulted in slightly better insertion loss by 1.5-2.4 dB, the chip size and power
                  dissipation were significantly larger than our design.
               
               
                     
                     
Table 2. Comparison with previously reported circulator IC.
                  
                  
                        
                           
                              | 
                                 
                              								
                               Ref. 
                              							
                            | 
                           
                                 
                              								
                               CMOS 
                              								
                              tech. 
                              							
                            | 
                           
                                 
                              								
                               Circulator 
                              								
                              configuration 
                              							
                            | 
                           
                                 
                              								
                               Freq. 
                              								
                              (GHz) 
                              							
                            | 
                           
                                 
                              								
                               Magnitudes of S-parameters (dB) 
                              							
                            | 
                           
                                 
                              								
                               Power diss.(mW) 
                              							
                            | 
                           
                                 
                              								
                               Chip size 
                              								
                              (mm2) **
                               
                              							
                            | 
                           
                                 
                              								
                               Integration details 
                              							
                            | 
                        
                        
                              | 
                                 
                              								
                               S21 
                              							
                            | 
                           
                                 
                              								
                               S32 
                              							
                            | 
                           
                                 
                              								
                               S13 
                              							
                            | 
                           
                                 
                              								
                               S12 
                              							
                            | 
                           
                                 
                              								
                               S23 
                              							
                            | 
                           
                                 
                              								
                               S31 
                              							
                            | 
                        
                        
                              | 
                                 
                              								
                               [9] 
                              							
                            | 
                           
                                 
                              								
                               40nm 
                              							
                            | 
                           
                                 
                              								
                               All-pass filter 
                              							
                            | 
                           
                                 
                              								
                               6.5 
                              							
                            | 
                           
                                 
                              								
                               -5.5* 
                              							
                            | 
                           
                                 
                              								
                               -2.5* 
                              							
                            | 
                           
                                 
                              								
                               -2.5* 
                              							
                            | 
                           
                                 
                              								
                               -18* 
                              							
                            | 
                           
                                 
                              								
                               -9.5* 
                              							
                            | 
                           
                                 
                              								
                               -9.5* 
                              							
                            | 
                           
                                 
                              								
                               12.4 
                              							
                            | 
                           
                                 
                              								
                               0.45* 
                              							
                            | 
                           
                                 
                              								
                               External clock 
                              							
                            | 
                        
                        
                              | 
                                 
                              								
                               [10] 
                              							
                            | 
                           
                                 
                              								
                               65nm 
                              							
                            | 
                           
                                 
                              								
                               N-path BPF 
                              							
                            | 
                           
                                 
                              								
                               0.75 
                              							
                            | 
                           
                                 
                              								
                               -2.5* 
                              							
                            | 
                           
                                 
                              								
                               -3* 
                              							
                            | 
                           
                                 
                              								
                               -4.5* 
                              							
                            | 
                           
                                 
                              								
                               -45* 
                              							
                            | 
                           
                                 
                              								
                               -45* 
                              							
                            | 
                           
                                 
                              								
                               -50* 
                              							
                            | 
                           
                                 
                              								
                               70* 
                              							
                            | 
                           
                                 
                              								
                               0.64 
                              							
                            | 
                           
                                 
                              								
                               External clock and off-chip inductors 
                              							
                            | 
                        
                        
                              | 
                                 
                              								
                               [14] 
                              							
                            | 
                           
                                 
                              								
                               180nm 
                              							
                            | 
                           
                                 
                              								
                               Active quasi 
                              							
                            | 
                           
                                 
                              								
                               1-7 
                              							
                            | 
                           
                                 
                              								
                               -10 
                              							
                            | 
                           
                                 
                              								
                               -9 
                              							
                            | 
                           
                                 
                              								
                               n.a. 
                              							
                            | 
                           
                                 
                              								
                               -15 
                              							
                            | 
                           
                                 
                              								
                               -30 
                              							
                            | 
                           
                                 
                              								
                               -36 
                              							
                            | 
                           
                                 
                              								
                               25.2 
                              							
                            | 
                           
                                 
                              								
                               1.47* 
                              							
                            | 
                           
                                 
                              								
                               Fully integrated 
                              							
                            | 
                        
                        
                              | 
                                 
                              								
                               [15] 
                              							
                            | 
                           
                                 
                              								
                               180nm SOI 
                              							
                            | 
                           
                                 
                              								
                               Switched TL 
                              							
                            | 
                           
                                 
                              								
                               0.95 
                              							
                            | 
                           
                                 
                              								
                               -2.1 
                              							
                            | 
                           
                                 
                              								
                               -2.9 
                              							
                            | 
                           
                                 
                              								
                               -4* 
                              							
                            | 
                           
                                 
                              								
                               -10* 
                              							
                            | 
                           
                                 
                              								
                               -15* 
                              							
                            | 
                           
                                 
                              								
                               -50* 
                              							
                            | 
                           
                                 
                              								
                               170 
                              							
                            | 
                           
                                 
                              								
                               16.5 
                              							
                            | 
                           
                                 
                              								
                               Fully integrated 
                              							
                            | 
                        
                        
                              | 
                                 
                              								
                               This work 
                              							
                            | 
                           
                                 
                              								
                               28nm 
                              							
                            | 
                           
                                 
                              								
                               N-path BPF 
                              							
                            | 
                           
                                 
                              								
                               2.4 
                              							
                            | 
                           
                                 
                              								
                               -4.5 
                              							
                            | 
                           
                                 
                              								
                               -4.9 
                              							
                            | 
                           
                                 
                              								
                               -5.5 
                              							
                            | 
                           
                                 
                              								
                               -35.7 
                              							
                            | 
                           
                                 
                              								
                               -40.3 
                              							
                            | 
                           
                                 
                              								
                               -44.8 
                              							
                            | 
                           
                                 
                              								
                               21.6 
                              							
                            | 
                           
                                 
                              								
                               0.93 
                              							
                            | 
                           
                                 
                              								
                               Fully integrated 
                              							
                            | 
                        
                     
                  
$^*$ Extracted from the figures in the paper, $^{**}$all pads excluded, TL: transmission
                  line
                  			
               
 
             
            
                  IV. CONCLUSION	
               In this work, we have presented the fully integrated non-magnetic CMOS circulator
                  IC based on a four-path BPF type staggered commutation network. Even if it provides
                  slightly large loss because of full integration including lumped-element transmission
                  lines, it shows good isolation performance among ports as well as an ultra-compact
                  size.
               
             
          
         
            
                  ACKNOWLEDGMENTS
               
                  				This work was supported by the National Research Foundation of Korea (NRF) grant
                  funded by the Korean government (MSIT) (No.RS-2022-NR069397). The chip fabrication
                  and EDA tool were supported by the IC Design Education Center (IDEC), Korea.
                  
                  			
               
             
            
                  
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               			Quang-Huy Do received his B.S. degree in mechatronics engineering from Hanoi University
               of Science and Technology (HUST), Hanoi, Vietnam, in 2020. He is currently pursuing
               a Master-Ph.D. degree at the High-Speed Semiconductor Circuit Laboratory, Department
               of Electronic Engineering, Kyung Hee University, Yongin, South Korea. His current
               research interests include high-frequency IC design.
               		
            
            
            
               			Tan-Binh Ngo received his B.S. degree in electronics telecommunications engineering
               from the Ho Chi Minh University of Technology, Ho Chi Minh City, Vietnam, in 2016.
               From 2016 to 2018, he was an analog mix-signal circuit designer with Uniquify Inc.,
               where he worked on SRAM and IO interface circuits for high-speed DRAM product. As
               of March 2018, he has been pursuing a Master-Ph.D. degree at the High-Speed Semiconductor
               Circuit Laboratory, Department of Electronic Engineering, Kyung Hee University, Yongin,
               South Korea. His current research interests include high-speed memory interface designs,
               RF circuits for wireless power transfer system and non-foster elements as well as
               non-reciprocal circuits for RFIC applications.
               		
            
            
            
               			Sang-Woong Yoon received his B.S. degree from Yonsei University, Seoul, South Korea,
               in 1998, an M.S. degree in electrical engineering from the Korea Advanced Institute
               of Science and Technology, Daejeon, South Korea, in 2001, and a Ph.D. degree in electrical
               and computer engineering from the Georgia Institute of Technology, Atlanta, GA, USA,
               in 2004. From 2005 to 2006, he was a Senior Design Engineer with RF Micro Devices,
               Billerica, MA, USA. From 2006 to 2007, he was with Marvell Semiconductor Inc., Santa
               Clara, CA, USA. In 2007, he joined Kyung Hee University, Yongin, South Korea, as a
               Faculty Member. He has authored or coauthored over 49 papers in referred international
               journals and conference proceedings. His current research interests include analog/RF
               IC design and RF module design in advanced integration technologies.